Trench gate emitter switched thyristors

Shekar, Meera; Korec, J.; Baliga, B. Jayant

doi:10.1109/ispsd.1994.583706

Cited by 19 publications

(4 citation statements)

References 4 publications

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“…The next major improvement came for the addition of "n enhancement" layer with the aim of further increasing the electron injection at the cathode side of the drift region. Some of the most effective designs in achieving this include the IEGT (Injection Enhanced Gate Transistor) [1,2], the CSTBT (Carrier Store Trench Bipolar Transistor) [3], the Trench EST (Emitter Switched Thyristor) [4,5], the HiGT (High Conductivity IGBT) [6,7] and the DMOS SPT+ IGBT (Soft Punch Through plus) [8]. The higher the doping concentration of the "n enhancement", the more significant the improvement in the on-state characteristics is.…”

Section: Introductionmentioning

confidence: 99%

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Antoniou

Lophitis

Bauer

et al. 2015

IEEE Electron Device Lett.

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Section: Introductionmentioning

confidence: 99%

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Antoniou

Lophitis

Bauer

et al. 2015

IEEE Electron Device Lett.

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“…The trench emitter switched thyristor (TEST) is such a structure, see ® gure 10 (b) (Baliga 1990, Shekar et al 1994. Instead of the n emitter being placed between the p-body and n-drift for a MOS channel in series with a PIN, it is placed within the p-body region.…”

Section: The Cstbt and Testmentioning

confidence: 99%

Silicon MOS controlled bipolar power switching devices using trench technology

Trajković¹,

Udrea²,

Amaratunga³

et al. 1999

International Journal of Electronics

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The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 8 kV) applications. Such devices will be based on utilizing the advantages brought about by trench gate MOSFETs to control bipolar current¯ow. In this paper we give a review of development of trench gate IGBTs and we describe brie¯y new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.

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“…2,3) Different IGBT structures have been developed according to application purpose. [4][5][6][7][8][9][10] The injectionenhanced insulated-gate bipolar transistor (IEGT) has been developed in order to reduce the on-state voltage, 11,12) enabling a smooth switching waveform (gradual slope switching) in comparison with the conventional IGBT. The difference between the two IGBT structures is that one is symmetrical and the other is asymmetrical, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction

Yamamoto

Miyake

Kato

et al. 2014

Jpn. J. Appl. Phys.

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Several techniques are nowadays available to determine the size distribution of nanoparticulate matter. Among these techniques, atomic force microscopy (AFM) is especially valuable because it can provide three-dimensional information on the shape of individual nanoparticles. This paper describes a new method to determine the size distribution of a population of spherical nanoparticles deposited on a hard substrate. The method is based on the acquisition and analysis of topographical AFM images. The size of individual nanoparticles is obtained by fitting the topographical region associated with the nanoparticle with a sphere. Tests on model systems based on nanoparticle reference materials consisting of polystyrene (PS) latex suspensions show promising results. The measured mean particle size is larger than the reference value, but this is a predictable effect of the AFM tip shape. Tests on a bi-modal mixture of two PS latex reference materials show the impact of the quality of the dispersion of the nanoparticles on the results obtained with the new technique.

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Trench gate emitter switched thyristors

Cited by 19 publications

References 4 publications

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Silicon MOS controlled bipolar power switching devices using trench technology

Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction

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