Trench MOS Barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plane breakdown voltage

A dual-metal-trench Schottky pinch-rectifier in 4H-SiC

“…A pinch rectifier utilizes a high barrier region to pinchoff or electrically shield a low barrier region. Many different pinch-rectifier device structures have been implemented and proven in Si, including implanted/diffused P-N junction pinch rectifiers (junction barrier Schottky (JBS) rectifiers) [4], trench-JBS (TJBS) rectifiers [5], and trench-MOS-barrierSchottky (TMBS) pinch rectifiers [6]. JBS and TMBS rectifiers have been recognized as evolutionary improvements of the planar power Schottky rectifier device structure [7].…”

A proposal of trapezoid mesa trench MOS barrier Schottky rectifier

“…And it is regarded as a possible candidate for the requirements above. It was mentioned that breakdown of TMBS occurs near the bottom of the trench [1]. However, as is going to be revealed in this article, the field crowding near the trench corner of TMBS leads to the difficulty of achieving more average electric field, thus higher breakdown voltage.…”

“…It was mentioned that, in order to get higher breakdown voltage while maintaining reasonable forward voltage drop and current carrying capability, there are optimal value to be chosen as m, s, t, d, t ox , etc [1]. In this work, the optimum structure of TM-TMBS we found has parameters as follows: a=0.8 Pm, b=2.8 Pm, c=8 Pm, d=5.9 Pm, s=5 Pm , t ox =0.9 Pm, epi layer doping N=10 16 cm -3 , and the Schottky barrier height (SBH) b0 =0.782 eV, which is extracted from measured I-V characteristics of a commercial planar SBD.…”

“…Hence new structures of SBD are required to reduce the reverse leakage current as well as to raise the breakdown voltage, especially for power device application. Trench MOS Barrier Schottky rectifier (TMBS) has been proposed and fabricated with various designing details [1][2][3]. And it is regarded as a possible candidate for the requirements above.…”

Static induction type power rectifier

“…With the increase of operating frequency in high power systems such as motor control circuits, high voltage power rectifiers with faster switching speed are required. New rectifier concepts, such as the Junction Barrier Schottky (JBS) rectifier [l] and the Trench MOS Barrier Schottky (TMBS) rectifier [2] for a low voltage power rectifier, and the merged P-i-N/Schottky (MPS) rectifier [3] and static shielding diode (SSD)[4] for a high voltage power rectifier, have been developed. These concepts are useful to achieve an excellent tradeoff between forward voltage drop, switching speed and reverse blocking voltage.…”