Triangular Carbon Nanotube Bundle Interconnects for Subthreshold VLSI Circuits

Due to the downscaling in the design of modern ICs, copper interconnects reach their limitations such as delay, power dissipation, and electromigration. However, a new era of discovered materials, including carbon nanotube, graphene nanoribbon (GNR), and their composite, has been proposed as promising alternatives for interconnect applications. The purpose of this review is to give an overview of the various approaches that are used to model graphene-based interconnects. In this work we focus on why opting for graphene-based interconnect properties as an alternative for copper interconnect replacement; what are the deep theories, which are explaining the electrical transport on those interconnects; and what are the electrical models that are used to model the various kind of graphene-based interconnects.

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“…In addition, some studies like the one in ref. [67], showed that T-CNT bundles outperform the other kind of bundles.…”

Section: Nanotube Bundles Modelsmentioning

confidence: 98%

Electrical Transport Modeling of Graphene-Based Interconnects

Nadir¹,

Belahrach²,

Abdelilah³

et al. 2023

Carbon Nanotubes - Recent Advances, New Perspectives and Potential Applications

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“…Our earlier works have modelled the propagation delay, power dissipated and power delay product of both the interconnect structures. 16,17 Further work on crosstalk analysis reveals that T-CNT bundles perform better than S-CNT bundles due to the reduced coupling capacitance of triangular CNT bundles. 16 Power dissipation trends.-Power dissipation in ICs can be categorised as static and dynamic power dissipation.…”

Section: Proposed Fabrication Steps Of T-cnt Bundle Interconnectsmentioning

confidence: 99%

“…16,17 Further work on crosstalk analysis reveals that T-CNT bundles perform better than S-CNT bundles due to the reduced coupling capacitance of triangular CNT bundles. 16 Power dissipation trends.-Power dissipation in ICs can be categorised as static and dynamic power dissipation. 25 Of the two, dynamic power dissipation is the main contributor in the overall power dissipated in an IC.…”

Section: Proposed Fabrication Steps Of T-cnt Bundle Interconnectsmentioning

confidence: 99%

Perspective—Demystifying the Power Withstanding Capabilities of CNT Bundle Interconnects

Robert

Sathyakam

2022

ECS J. Solid State Sci. Technol.

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This article discusses power consumption trends of two geometries of carbon nanotube (CNT) bundle interconnects for very large scale integration applications. Electrostatic and electrothermal field simulations of square and triangular CNT bundle interconnects were done. Two factors viz. power dissipated and peak temperature are extracted and a new figure of merit called power temperature product (PTP) is defined. The PTP is calculated for interconnect lengths ranging from 500 to 2000µm. Results show that both triangular and square CNT bundles have high power withstanding capacity. Triangular CNT bundles have higher PTP when the associate phase changes are ignored.

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“…Many works in literature discusses the models of CNT based interconnects. [20][21][22][23] Basically, a bundle of CNTs are used to mitigate the problem of high resistivity of a single CNT, which is around 6.45 kΩ μm −1 . Figure 1 shows the CNT bundle geometry used in this work.…”

Section: Interconnect Circuit Modelsmentioning

confidence: 99%

Performance Analysis of CNT Bundle Interconnects in Various Low-k Dielectric Media

Shefali¹,

Fatima²,

Sathyakam³

2022

ECS J. Solid State Sci. Technol.

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The capacitance of the interconnect, which contributes to RC delay, power, and crosstalk, is increasingly limiting the performance of ULSI chips as IC technology advances. Different dielectric materials are employed as electrical shielding between interconnects (also called as inter-wire dielectrics) to minimise the coupling capacitance of closely spaced interconnects, and they are compared in terms of their performance. For SWCNT and MWCNT interconnects at various global interconnect lengths for 20 nm and 14 nm technology nodes, performance parameters such as crosstalk delay, power dissipation, power crosstalk delay product (PCDP) and crosstalk noise are calculated and compared. It is observed that, upon using different dielectric materials in CNT bundle interconnect, MWCNT bundle interconnects is performing better compared to SWCNT bundle interconnects at 20 nm and 14 nm technology nodes for all global interconnect lengths.

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Triangular Carbon Nanotube Bundle Interconnects for Subthreshold VLSI Circuits

Cited by 8 publications

References 29 publications

Electrical Transport Modeling of Graphene-Based Interconnects

Electrical Transport Modeling of Graphene-Based Interconnects

Perspective—Demystifying the Power Withstanding Capabilities of CNT Bundle Interconnects

Performance Analysis of CNT Bundle Interconnects in Various Low-k Dielectric Media

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