Trimming of microring resonators by photo-oxidation of a plasma-polymerized organosilane cladding material

Sparacin, Daniel K.; Hong, Ching-yin; Kimerling, Lionel C.; Michel, Jürgen; Lock, John P.; Gleason, Karen K.

doi:10.1364/ol.30.002251

Cited by 33 publications

(18 citation statements)

References 13 publications

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“…Hence trimming is mostly applied to the cladding material. It has been shown that by trimming the cladding refractive index either by using photo-oxidation of polymer cladding [94] or by inducing stress to BOx layer [95].…”

Section: Tuning and Trimmingmentioning

confidence: 99%

Silicon microring resonators

Bogaerts

Heyn

Vaerenbergh

et al. 2011

Laser & Photonics Reviews

2,093

1,100

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Section: Tuning and Trimmingmentioning

confidence: 99%

Silicon microring resonators

Bogaerts

Heyn

Vaerenbergh

et al. 2011

Laser & Photonics Reviews

2,093

1,100

View full text Add to dashboard Cite

show abstract

“…[17][18][19][20][21][22][23] What potential showstoppers exist? Six issues have been identified as necessary for a complete ULSI silicon microphotonic CMOS technology: i) neutralization of refractive index sensitivity to temperature fluctuations though the thermo-optic effect [24,25]; ii) achieving dimensional precision required for optical components [26]; iii) active Ge devices within the interconnect stack without an epitaxial growth template [27]; iv) computer aided design and simulation of electronic-photonic circuits [28,29,30]; iv) chiplevel photonic test; and v) scalable electronic-photonic packaging. Research solutions have been achieved for each issue, and proof of implementation at the required cost and performance points are the roadmap.…”

Section: The Roadmap For Monolithic Silicon Microphotonicsmentioning

confidence: 99%

Monolithic Microphotonic Integration on the Silicon Platform

Kimerling

Michel

2011

ECS Trans.

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Photonic integration in ULSI electronic circuits contributes three new functionalities that are critical to performance scaling: i) power efficient, global interconnection, ii) high bandwidth density chip-chip communication, and iii) optical signal processing. With the transition to parallel chip architectures, efficient communication among processing nodes can become a limiting factor to both programming and performance. A photonic communication layer can provide distance independent, low latency interconnection with efficient broadcast capability. On-chip photonic signal channels can provide wavelength division multiplexed, photonic pins with >100x improvement in I/O bandwidth density over ball grid arrays. Monolithic integration of these capabilities in the CMOS process flow can be achieved with Ge active devices (photodetectors, modulators, lasers) and Si/SiON passive components (waveguides, resonators, couplers). Process integration can be achieved with both FEOL and BEOL strategies. Scaling Information Technology: Energy, Bandwidth, and CostInformation Technology (IT), enabled by ULSI silicon, has produced exponential increases in communication capacity (bits/second) and computation performance (operations-per-second) at constant cost. Internet traffic is increasing today at a pace of 40%/year and computation performance follows a Moore's Law pace of 100x/decade at the chip level and a faster 1000x/decade at the system level (facilitated by increased parallelism in system architecture). These paced advances, heralded as The Information Age, have been enabled by an integrated CMOS hardware platform that has delivered required improvements in power efficiency, performance and cost by dimensional scaling. Today the challenges of energy consumption and communication bandwidth call for a new scaling paradigm based on the integration of photonic functionality in CMOS. This paper is written as a guide to the technology and implementation strategies for photonic integration with ULSI electronics. It bridges CMOS and fiber optic technologies to attract a community to this new chip platform. [1,2,3] While the demand for increasing IT performance seems secure, the path for delivering that performance has encountered several significant barriers. The projected energy consumption by Information Technology has become an unsustainable fraction of the world electrical power generation. Server farms require >100MW of power; the IP switching to route Internet messages consumes ~10TWhr/year/telecom-carrier; servers, IP-traffic and peripherals use, in aggregate, ~5% of national electricity generation with predictions of >100% by 2020.The bandwidth barrier to scaling is evident in the information processing guideline (Amdahl's Law) of one Byte of communication for

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“…The loaded Q and its relation with the intrinsic Q cannot be controlled precisely. Some trimming processes have been proposed to control the resonance frequency but not the coupling [18,19].…”

Section: Introductionmentioning

confidence: 99%

Characterization of quality-factor tunable integrated silicon microtoroidal resonators

Yao

Leuenberger

2007

SPIE Proceedings

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Microresonators are basic building blocks for compact photonic integrated circuits (PICs). The performance of the microresonators depends on their intrinsic and loaded quality factors (Q). Here we demonstrate the optical characterization of a single crystalline silicon microtoroidal resonator with integrated MEMS-actuated tunable optical coupler. The device is realized on a two-layer silicon-on-insulator (SOI) structure. It is fabricated by combining hydrogen annealing and wafer bonding processes. The device has been demonstrated to be operated in all three coupling regimes: under-coupling, critical coupling, and over-coupling. At an actuation voltage of 114 V, the extinction ratio at the resonant wavelength of 1548.18 nm reaches 22.4 dB. To characterize these quality-factor tunable microtoroidal resonators, we have also developed a comprehensive model based on time-domain coupling theory. The intrinsic and loaded Qs are extracted by fitting the experimental curves with the model. The intrinsic Q is 110,000. And the loaded Q is continuously tunable from 110,000 to 5,400. This device has potential applications in variable bandwidth filters, reconfigurable add-drop multiplexers, and optical sensors.

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Trimming of microring resonators by photo-oxidation of a plasma-polymerized organosilane cladding material

Cited by 33 publications

References 13 publications

Silicon microring resonators

Silicon microring resonators

Monolithic Microphotonic Integration on the Silicon Platform

Characterization of quality-factor tunable integrated silicon microtoroidal resonators

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