Tunable RF MEMS-based Frequency Dependent Power Limiter

Shojaei-Asanjan, Desireh; Attar, Sara S.; Mansour, Raafat R.

doi:10.1109/mwsym.2016.7539955

Cited by 8 publications

(6 citation statements)

References 5 publications

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“…To achieve a radiofrequency power limiter, many scientific researches have been proposed for the design of power limiters based on PIN diodes, Schottky diodes, and MESFET transistors. The utilization of semiconductor diodes for limiting microwave power has been recently discussed in several published studies . Depending on the chosen diode components, the power limiters can be grouped as passive and active limiters.…”

Section: Introductionmentioning

confidence: 99%

Investigation of microwave power limiter for Industrial Scientific Medical band (ISM) applications

Sardi

Alkurt

Özkaner

et al. 2020

Int J RF Microw Comput Aided Eng

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In this paper, a new design of microstrip power limiter which is based on microstrip technology and zero bias Schottky diode is introduced. In this context, the FR-4 substrate that was characterized by dielectric permittivity (4.4), dielectric thickness (1.6 mm), and the HSMS 286k Schottky diode is used to design the proposed power limiter. The planar resonators are designed, optimized, and simulated with the shunting of the HSMS 286k diodes by using Schematic solver integrated in ADS from Agilent Technologies. The simulation results are significant in terms of high impedance matching, strong insertion of the low power, and good limitation ratio of the high power. The proposed power limiter is fabricated and tested in the measurement part. It is observed that the results are in agreement with the numerical analysis in terms of matching, isolation, and power limitation. The achieved microwave power limiter offers simple construction, small size (44 × 40 mm 2 ), wide bandwidth, and good limitation ratio less than 10 dBm when the input power reaches 30 dBm. K E Y W O R D SADS library, microstrip, microwave power, short stubs, zero bias Schottky diode

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Section: Introductionmentioning

confidence: 99%

Investigation of microwave power limiter for Industrial Scientific Medical band (ISM) applications

Sardi

Alkurt

Özkaner

et al. 2020

Int J RF Microw Comput Aided Eng

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show abstract

“…Power limiters are also implemented in a diverse array of technologies including semiconductor diode [6], [7], FET [8]- [10], ferromagnetic [11]- [13], MEMS [14], [15], and plasma [16]- [20]. Power limiting is important for the protection of sensitive RF and microwave systems.…”

Section: Introductionmentioning

confidence: 99%

Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement

2020

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A novel hybrid approach integrating a MEMS switch with a gas discharge tube plasma cell to enhance switch survivability and isolation, especially at high incident power levels, is demonstrated. The theory of operation is discussed including consideration of the underlying plasma phenomena as well as the practical integration details. Measurement of a fabricated prototype is presented. Discussion of measurement challenges and potential solutions is accompanied by detailed explanations of measurement practice. Measurements provide insights into applied RF plasmas not present in the body of literature. Wideband enhancement of isolation by more than 10 dB at 50 W incident power is observed in a quasi-absorptive mode with increasing isolation over power. No penalty to the excellent linearity of MEMS switches is detected with a measured IIP3 of 75.3 dBm. Advantages in linearity as compared to semiconductor-based power limiting solutions are shown and demonstrate state-of-the-art performance. An incremental insertion loss of less than 0.2 dB with a return loss better than 12.5 dB is reported. Measurement of the effects on MEMS switch timing parameters as well as time domain characterization of the plasma breakdown is included.

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“…In practical applications, we use an antenna as a radiator by designing the waveguide with a discontinuous structure (such as slots in a transmission line for leaky wave antenna) to enable electrons to be accelerated or decelerated, so as to generate EM waves [1–3]. MEMS device has the potential as an EM radiator, though MEMS in radio wave applications are usually limited to switches and reconfigurable devices such as phase shifters, polarisers, and frequency filters [4–6]. MEMS have both mechanical and electrical properties that are coupled to each other.…”

Section: Introductionmentioning

confidence: 99%

EM radiation from electrostatic nonlinear pull‐in instability of MEMS

Luo¹,

Xu²,

Yang³

et al. 2018

Electron. lett.

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Electrodynamics theory tells that EM waves are generated from accelerated charged particles. Conventional radiators such as antennas are understood to emit waves because of the current's distribution and accumulation in the capacitor, where electrons are accelerated. In MEMS mechanisms, charges can be accelerated by the mechanical motion, which suggests that an MEMS structure can also be a radiator. The electrodynamics to theoretically analyse the EM wave radiation from MEMS is used. During the electrostatic nonlinear pull-in instability MEMS, where the electrostatic gap has become narrower than the 2/3 of the initial gap, the distributed charges are accelerated at a very high rate so as to generate significant power radiation in the form of EM waves. The MEMS's mechanical accelerations are analysed to calculate the transient radiations in both spatial and frequency domains.

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Tunable RF MEMS-based Frequency Dependent Power Limiter

Cited by 8 publications

References 5 publications

Investigation of microwave power limiter for Industrial Scientific Medical band (ISM) applications

Investigation of microwave power limiter for Industrial Scientific Medical band (ISM) applications

Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement

EM radiation from electrostatic nonlinear pull‐in instability of MEMS

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