Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

Ilatikhameneh, Hesameddin; Tan, Yaohua; Novaković, Božidar; Klimeck, Gerhard; Rahman, Rajib; Appenzeller, Joerg

doi:10.1109/jxcdc.2015.2423096

Cited by 176 publications

(135 citation statements)

References 41 publications

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“…In this respect, monolayers of graphene or transition-metal dichalcogenides are very attractive because they have a sub-nanometer thickness and are in principle free of dangling bonds at the surface, in virtue of their native 2D nature. Several arrangements for BTBT transistors based on 2D crystals have been proposed [150], ranging from the lateral transistor sketched in figure 16(a) and having an architecture similar to conventional TFETs based on 3D semiconductors [151][152][153], to several possible embodiments based on vertical van der Waals hetero-structures between 2D crystals or between 3D and 2D crystals [154,155], an example of which is shown in figure 16(b). The weak bonding in the out-of-plane direction is expected to ease the fabrication of vertical hetero-structures with limited strain even in presence of a significant lattice mismatch [150].…”

Section: Tunnel Fets Based On 2d Crystals and Van Der Waals Hetero-stmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrödinger equation problems. We will then address models that solve the open-boundary Schrödinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

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Section: Tunnel Fets Based On 2d Crystals and Van Der Waals Hetero-stmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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“…Fig.1 (a)), and a corresponding convoluted spaghetti-like band structure due to the aggressive folding of its Brillouin zone (BZ) 7 . In principle, atomistic first principles as well as empirical methods 8,9 can be used to model such twisted bilayer systems. However, as large unit cells of twisted systems increase the computational load dramatically, atomistic simulations are limited to specific twist angles with tractable BZ sizes instead of random orientations.…”

Section: Introductionmentioning

confidence: 99%

First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding

Tan

Chen

Ghosh

2016

Applied Physics Letters

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We explore the band structure and ballistic electron transport in twisted bilayer MoS2 using Density Functional Theory (DFT). The sphagetti like bands are unfolded to generate band structures in the primitive unit cell of the original un-twisted MoS2 bilayer and projected onto an individual layer. The corresponding twist angle dependent indirect bandedges are extracted from the unfolded band structures. Based on a comparison within the same primitive unit cell, an efficient two band effective mass model for indirect conduction and valence valleys is created and parameterized by fitting the unfolded band structures. With the two band effective mass model, transport properties -specifically, we calculate the ballistic transmission in arbitrarily twisted bilayer MoS2.

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“…This breakthrough has stimulated the exploration of 2D materials such as hexagonal boron nitride (hBN)3 and transition-metal dichalcogenides (TMDs)4 of formula MX 2 , where M is a IVB-VIB transition metal atom (IVB: Ti and Zr; V-B: Nb and Ta; VI-B: Mo and W) and X is a chalcogen (S, Se, or Te). Due to the d -orbitals involved in their electronic structure, the TMDs exhibit a wide range of electronic properties that have led to advances in practical devices, including field effect transistors56789101112, photodetectors1314, chemical15 and biosensors161718, and nano-electromechanical systems (NEMS)1920.…”

mentioning

confidence: 99%

Tungsten Ditelluride: a layered semimetal

Lee

Cruz‐Silva

Calderín

et al. 2015

Sci Rep

220

176

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Tungsten ditelluride (WTe2) is a transition metal dichalcogenide (TMD) with physical and electronic properties that make it attractive for a variety of electronic applications. Although WTe2 has been studied for decades, its structure and electronic properties have only recently been correctly described. We experimentally and theoretically investigate the structure, dynamics and electronic properties of WTe2, and verify that WTe2 has its minimum energy configuration in a distorted 1T structure (Td structure), which results in metallic-like transport. Our findings unambiguously confirm the metallic nature of WTe2, introduce new information about the Raman modes of Td-WTe2, and demonstrate that Td-WTe2 is readily oxidized via environmental exposure. Finally, these findings confirm that, in its thermodynamically favored Td form, the utilization of WTe2 in electronic device architectures such as field effect transistors may need to be reevaluated.

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Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

Cited by 176 publications

References 41 publications

A review of selected topics in physics based modeling for tunnel field-effect transistors

A review of selected topics in physics based modeling for tunnel field-effect transistors

First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding

Tungsten Ditelluride: a layered semimetal

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