Turn-Off Behavior of 1.2 kV/25 A NPT-CIGBT Under Clamped Inductive Load Switching

Abstract

For the first time, this paper analyzes the turn-off behavior of the planar 1.2 kV/25, a nonpunch-through clustered insulated gate bipolar transistor (NPT-CIGBT) under clamped inductive load switching, in detail and through experiment simulation. Turn-off behavior of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied in order to observe the dI/dt, dV/dt, and turn-off energy loss of the device. Experimental results are shown at 25 C and 125 C. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process.