Ultra-Low-Voltage Design of Energy-Efficient Digital Circuits

Reynders, Nele; Dehaene, Wim

doi:10.1007/978-3-319-16136-5

Cited by 15 publications

(3 citation statements)

References 22 publications

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“…( 9) further justifies the necessity of terminating the xor i /xnr i signals at SCG branches and if not, V OH xor 3 further degrades through the resistive paths of SCG. Ideally, the impact of ∆V sw on the noise margin of the compressor should be minimal and both low/high noise margin levels should remain balanced at low V DD [28].…”

Section: Rd13mentioning

confidence: 99%

Ultra-Low Voltage 4-to-2 Compressors for Near-V_th Computing

Ranasinghe

Gerez

2020

2020 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper presents two novel circuit arrangements for an ultra-low voltage, low-power 4-to-2 compressor targeting typical near-V th application domain. A hybrid logic style is utilized to exploit energy efficiency by means of parasitic reduction in circuit blocks. Proposed structures are evaluated against prevalent compressors in terms of their typical figure of merits and noise immunity. From extensive post-layout simulations in 65-nm bulk CMOS process technology, the most optimal arrangement was found to be 35% more power efficient, 3.4% faster, 8% more area efficient and 37% better in PDP at 0.4VDD compared to most appealing implementations in literature.

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Section: Rd13mentioning

confidence: 99%

Ultra-Low Voltage 4-to-2 Compressors for Near-V_th Computing

Ranasinghe

Gerez

2020

2020 IEEE International Symposium on Circuits and Systems (ISCAS)

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“…Operating in subthreshold is challenging for reliability reasons [11], [8]. The Noise Margin NM is used as a measure for correct functioning of a gate.…”

Section: A Design Requirementsmentioning

confidence: 99%

Exploration and Design of Low-Energy Logic Cells for 1 kHz Always-on Systems

Feyerick

Roose

Verhelst

2019

2019 Design, Automation &Amp; Test in Europe Conference &Amp; Exhibition (DATE)

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A standard cell library targeting always-on operation at 1 kHz is designed at circuit-level. This paper proposes a design methodology to achieve robust operation with minimum energy. Such minimum energy per operation for alwayson systems is achieved by one specific supply and threshold voltage V T h combination. As V T h is discrete in a practical bulk technology, this minimum can however not be achieved through simple voltage tuning. In the considered 90 nm CMOS technology, V T h is too low resulting in leakage dominated systems and preventing from attaining the minimum energy point in subthreshold. Three circuit techniques are optimally combined to fight leakage: stacking, reverse body biasing and optimal transistor dimensioning relying on second order effects of the dimensions on V T h. They jointly allow logic gates to achieve the best balance between dynamic and leakage power. Moreover, the paper presents modified flip-flop topologies that also reliably operate at 0.27 V along with the gates. Benefits of improved logic gates and flip-flops are demonstrated on a small alwayson feature-extraction system calculating running average and variance on a 1 Ksample/s data stream. The resulting system consumes 162 pW in simulation, or two orders of magnitude less when compared to a commercial library at its 1 V nominal voltage, or 1 order of magnitude less when compared to the commercial library at the same 0.27 V operating voltage.

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“…The current flowing between drain and source in the diode-connected MOS transistor in the strong inversion region (over threshold voltage) is defined by expression [21]: (1) where µ -electron mobility, ε -SiO2 permittivity, ε0electric constant (vacuum permittivity), dgate oxide thickness, Wtransistor channel width, Ltransistor channel length, Vddiodeconnected transistor voltage, Vth -threshold voltage, λchannel length modulation parameter.…”

Section: Research Of Mosfet Parameters Impact On the Output Voltagementioning

confidence: 99%

Research of Nanoscale MOSFET Parameters Impact on the Performance of Energy Converters for Internet of Things

2019

International Journal of Innovative Research in Electronics and

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Wireless microdevices are widely adopted in Radio-frequency Identification (RFID), Wireless Sensor Networks (WSN), Internet of Things (IoT). Among them, passive devices have a special place, since they haven't constant internal power supply. Passive devices are cheaper and more compact than their active analogs, their lifetime is higher, and they can be applied in some applications, which are inappropriate for active tags, e.g. in medical implants. However passive devices have to receive the energy for operation from the outside through RF radiation -from reader or harvesting energy from the environment. For conversion this energy to power supply voltage of passive microdevice IC, voltage rectifiers are used. The purpose of this work is research of impact on output voltage by parameters of nanoscale diode-connected MOSFETs, which perform functions of rectifiers in the energy converters. The comparison of different voltage rectifier configurations was made based on Tanner EDA simulation results. The current-voltage characteristics of diode-connected MOSFETs were obtained for different CMOS technologies. The impact of transistor threshold voltage and its sizes on output voltage of single-stage multiplier for different technologies, input voltage amplitudes and load resistances was investigated. The results of the research can be useful in the design of wireless passive microdevices.

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Ultra-Low-Voltage Design of Energy-Efficient Digital Circuits

Abstract: More information about this series at

Cited by 15 publications

References 22 publications

Ultra-Low Voltage 4-to-2 Compressors for Near-V_th Computing

Ultra-Low Voltage 4-to-2 Compressors for Near-V_th Computing

Exploration and Design of Low-Energy Logic Cells for 1 kHz Always-on Systems

Research of Nanoscale MOSFET Parameters Impact on the Performance of Energy Converters for Internet of Things

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Ultra-Low-Voltage Design of Energy-Efficient Digital Circuits

Abstract: More information about this series at

Cited by 15 publications

References 22 publications

Ultra-Low Voltage 4-to-2 Compressors for Near-Vth Computing

Ultra-Low Voltage 4-to-2 Compressors for Near-Vth Computing

Exploration and Design of Low-Energy Logic Cells for 1 kHz Always-on Systems

Research of Nanoscale MOSFET Parameters Impact on the Performance of Energy Converters for Internet of Things

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Product

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Ultra-Low Voltage 4-to-2 Compressors for Near-V_th Computing

Ultra-Low Voltage 4-to-2 Compressors for Near-V_th Computing