Ultra-thin MoS2 irradiated with highly charged ions

Hopster, Johannes; Kozubek, Roland; Krämer, J.M.; Schleberger, Marika

doi:10.1016/j.nimb.2013.02.038

Cited by 31 publications

(22 citation statements)

References 23 publications

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“…One method often adopted in experiments to induce cross-planar defects in carbon-based nanomaterials is electron [38][39][40] or ion irradiation 41,42 . The irradiation approach has been widely used to modify the structural properties of, e.g., carbon nanotubes 11,12,15,16,[40][41][42] , graphite 11,14,24 and other 2D structures [43][44][45][46][47][48] . During irradiation, the incoming particles deploy sufficient energy to cause large out-of-plane displacements of atoms and thus aid the formation of covalent interlayer links.…”

Section: Resultsmentioning

confidence: 99%

Covalent pathways in engineering h-BN supported graphene

Ouyang

Song

2016

Carbon

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Cross-planar di-vacancies (CPDVs) within stacked graphene hexagonal boron nitride (h-BN) heterostructures provide stabilized covalent links to bridge adjacent graphene and h-BN sheets. It was shown that the CPDVs serve as focal points for cross-planar atom transport between graphene and h-BN, and the chemical nature of interlayer links along with associated cross-planar migration pathways at these defects can be predictively manipulated through modulation of the chemical environment and charge engineering, to achieve consistent B or N doping and simultaneous healing of graphene. The present study proposed a viable approach integrating irradiation, chemical and charge engineering, to produce high-quality graphene with tunable electronic and electrochemical properties, using the h-BN substrate.

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Section: Resultsmentioning

confidence: 99%

Covalent pathways in engineering h-BN supported graphene

Ouyang

Song

2016

Carbon

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“…The substrate does indeed play a decisive role, as we will show further below, but it is by no means a prerequisite. In figure 5 we show scanning transmission electron microscopy (STEM) medium-angle-angulardark-field (MAADF) images from freestanding layers Hopster et al [101] deposited MoS 2 mono-layers on KBr(100) substrates and irradiated them with highly charged Xe ions (Xe 35+ with kinetic energy of 25.4 keV and Xe 40+ with kinetic energy of 38.5 keV) in a vacuum at room temperature. The fluences ranged from 5 × 10 9 -2 × 10 10 ions/cm 2 .…”

Section: (A)mentioning

confidence: 99%

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

et al. 2019

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Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.

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“…7. In this compilation we omitted results from HCI irradiations of layered materials like mica, HOPG and recently MoS2 [63] because of their anisotropic transport properties that can influence the thermal spike [64] and may result in a shift of the track formation threshold. From Fig.…”

Section: Grazing Incidence Irradiationmentioning

confidence: 99%

Response of GaN to energetic ion irradiation: conditions for ion track formation

Karlušić¹,

Kozubek²,

Lebius³

et al. 2015

J. Phys. D: Appl. Phys.

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We investigated the response of wurzite GaN thin films to energetic ion irradiation. Both swift heavy ions (92 MeV Xe 23+ , 23 MeV I 6+ ) and highly charged ions (100 keV Xe 40+ ) were used. After irradiation, the samples were investigated using atomic force microscopy, grazing incidence small angle X-ray scattering, Rutherford backscattering spectroscopy in channelling orientation and time of flight elastic recoil detection analysis. Only grazing incidence swift heavy ion irradiation induced changes on the surface of the GaN, when the appearance of nanoholes is accompanied by a notable loss of nitrogen. The results are discussed in the framework of the thermal spike model.

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Ultra-thin MoS2 irradiated with highly charged ions

Cited by 31 publications

References 23 publications

Covalent pathways in engineering h-BN supported graphene

Covalent pathways in engineering h-BN supported graphene

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Response of GaN to energetic ion irradiation: conditions for ion track formation

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