Ultra-Thin Silicon Wafers Fabrication and Inverted Pyramid Texturing Based on Cu-Catalyzed Chemical Etching

Omer, Altyeb Ali Abaker; He, Zi Fen; Hong, Shihao; Chang, Yuan-Chih; Yu, Jie; Li, Shaoyuan; Ma, Wenhui; Li, Wen; Kolaly, Wael El; Chen, Ran

doi:10.1007/s12633-020-00429-x

Cited by 8 publications

(6 citation statements)

References 31 publications

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“…This is due to the fact that silicon with the IP structure can realize several reflections and increase the optical path of the light, which in turn improves the absorption of the incident light. 37 This effect is clearly demonstrated in Figure 2e. As can be seen from Figure 2e, three reflections can occur when a beam of incident light illuminates on the surface of the IP silicon.…”

Section: Resultsmentioning

confidence: 68%

“…The lowest reflectance of as low as 5% in the wavelength of 500–900 nm for the IP silicon prepared with the etching time of 20 min can be obtained. This is due to the fact that silicon with the IP structure can realize several reflections and increase the optical path of the light, which in turn improves the absorption of the incident light . This effect is clearly demonstrated in Figure e.…”

Section: Resultsmentioning

confidence: 87%

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Direct Growth of Graphene Nanowalls on Inverted Pyramid Silicon for Schottky Junction Solar Cells

Huang

Zhang

et al. 2021

ACS Appl. Energy Mater.

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In this work, we develop a radio-frequency plasma-enhanced horizontal tube furnace deposition system to directly grow graphene nanowalls (GNWs) on inverted pyramid (IP) silicon without using catalysts and fabricate GNWs/IP silicon Schottky junction solar cells. The morphology, microstructure, and optical and electrical properties of the synthesized GNWs and IP silicon are investigated. It is shown that GNWs are distributed on the whole surface of the IP silicon and feature an outstanding electrode network. Moreover, in situ optical emission spectroscopy measurement is carried out to investigate the growth process and chemical reaction mechanism of GNWs under the plasma-based process. Due to the excellent light-trapping structure of IP silicon and outstanding electrode network of GNWs, the photovoltaic conversion efficiency (PCE) of the pristine GNWs/IP Si solar cells can reach up to 4.05% via controlling the growth time of GNWs. A PCE of 7.2% can be achieved for the GNWs/IP Si solar cells by combining HNO3 p-doping treatment and spin-coating TiO2 as an antireflective layer. This work plays a vital role in the development of a simple and advanced process for the realization of high-efficiency graphene-based solar cells.

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Section: Resultsmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 87%

Direct Growth of Graphene Nanowalls on Inverted Pyramid Silicon for Schottky Junction Solar Cells

Huang

Zhang

et al. 2021

ACS Appl. Energy Mater.

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“…The IP structure of silicon increases the light absorption of the solar cell owing to its superior light-trapping performance compared to the traditional UP, especially in the short-wavelength range. [19][20][21] Additionally, its low surface ratio does not lead to severe surface recombination. Consequently, the short-circuit current (I sc ) and open-circuit voltage (V oc ) of the ultrathin solar cells can be simultaneously improved, resulting in a higher η for the device.…”

Section: Ip Preparation and Optical Performancementioning

confidence: 99%

Ultrathin Bifacial Passivated Emitter and Rear Cell with Inverted Pyramid Textures

Shi

Fan

et al. 2021

Physica Status Solidi (a)

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Wafer thinning is a crucial technique for high‐efficiency solar cells. Herein, an inverted pyramid (IP) texture is prepared on a 35 μm‐thick flexible silicon (Si) wafer with a standard area of 156 × 156 mm2. Based on the experimental results, an ultrathin bifacial passivated emitter and rear cell (PERC) with IP textures using PC1D simulation is designed. The influence of wafer thickness, IP texture, bifacial structure, thickness of the antireflection coating, and doping concentration on device performance is investigated. The results show that the ultrathin IP‐based bifacial PERC possesses better output performance than the traditional cell. Finally, a simulated maximum efficiency of 23.44% is obtained using PC1D software, with an open‐circuit voltage of 0.7127 V and a short‐circuit current of 9.272 A. This ultrathin PERC with IP textures provides an effective way to improve the efficiency of ultrathin silicon solar cells.

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“…Anisotropic wet etching [ 28 ] takes advantage of the fact that different crystal orientations of Si have different etching rates in alkaline solutions, and, thus, allows for the preparation of large-area micro-nano pyramidal array structures on the surface of monocrystalline silicon. In conventional structures, pyramids are randomly distributed and overlap each other [ 20 , 29 ], which affect the efficiency of reflection. When the light sources impinge the wafer, the reflected light path is confirmed because all the reflecting surfaces are at the same angle [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes

Zhao

Zhang

et al. 2021

Micromachines

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We report the fabrication, electromagnetic simulation and measurement of inverted silicon pyramidal arrays with randomly distributed nanoholes that act as an anti-reflectivity coating. The fabrication route combines the advantages of anisotropic wet etching and metal-assisted chemical etching. The former is employed to form inverted silicon pyramid arrays, while the latter is used to generate randomly distributed nanoholes on the surface and sidewalls of the generated inverted silicon pyramidal arrays. We demonstrate, numerically and experimentally, that such a structure facilitates the multiple reflection and absorption of photons. The resulting nanostructure can achieve the lowest reflectance of 0.45% at 700 nm and the highest reflectance of 5.86% at 2402 nm. The average reflectance in the UV region (250–400 nm), visible region (400–760 nm) and NIR region (760–2600 nm) are 1.11, 0.63 and 3.76%, respectively. The reflectance at broadband wavelength (250–2600 nm) is 14.4 and 3.4 times lower than silicon wafer and silicon pyramids. In particular, such a structure exhibits high hydrophobicity with a contact angle up to 132.4°. Our method is compatible with well-established silicon planar processes and is promising for practical applications of anti-reflectivity coating.

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Ultra-Thin Silicon Wafers Fabrication and Inverted Pyramid Texturing Based on Cu-Catalyzed Chemical Etching

Cited by 8 publications

References 31 publications

Direct Growth of Graphene Nanowalls on Inverted Pyramid Silicon for Schottky Junction Solar Cells

Direct Growth of Graphene Nanowalls on Inverted Pyramid Silicon for Schottky Junction Solar Cells

Ultrathin Bifacial Passivated Emitter and Rear Cell with Inverted Pyramid Textures

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes

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