Ultrafast carrier dynamics in an InGaN thin film

Wang, Hsiang‐Chen; Lu, Yen Cheng; Teng, Chih Chung; Chen, Yung Sheng; Yang, C. C.; Jen, Kung; Pan, C.-C.; Chyi, Jen Inn

doi:10.1063/1.1847705

Cited by 11 publications

(6 citation statements)

References 20 publications

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“…8, the second curve from the bottom corresponds to the case of degenerate pumpprobe experiment. It is almost identical to that obtained from another setup of degenerate measurement [12], confirming the reliability of our non-degenerate system. In this degenerate curve, the pump/probe photon energy corresponds to the level of low space-averaged density of state [12].…”

Section: Basic Materials Nano-structure and Optical Properties Of The supporting

confidence: 85%

“…It is almost identical to that obtained from another setup of degenerate measurement [12], confirming the reliability of our non-degenerate system. In this degenerate curve, the pump/probe photon energy corresponds to the level of low space-averaged density of state [12]. In this situation, two-photon absorption and free-carrier absorption dominate the process of carrier dynamics.…”

Section: Basic Materials Nano-structure and Optical Properties Of The supporting

confidence: 85%

“…The HRTEM investigations were performed using a Philips Tecnai F30 field-emission electron microscope with an accelerating voltage of 300 kV and a probe forming lens of Cs = 1.2 mm. Our pumpprobe study on the sample aims at the understanding of carrier dynamics in such a structure of nano-clusters and potential fluctuations [12]. Figure 7 shows the photoluminescence (PL) spectra at various temperatures of the sample.…”

Section: Basic Materials Nano-structure and Optical Properties Of The mentioning

confidence: 99%

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Non-degenerate fs pump-probe study on InGaN with multi-wavelength second-harmonic generation

Wang¹,

Lu²,

Chen³

et al. 2005

Opt. Express

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Non-degenerate fs pump-probe experiments in the UV-visible range for ultrafast carrier dynamics study of InGaN with adjustable pump and probe photon energies are implemented with simultaneously multiwavelength second-harmonic generation (SHG) of a 10 fs Ti:sapphire laser. The multi-wavelength SHG is realized with two beta-barium borate crystals of different cutting angles. The full-widths at half-maximum of the SHG pulses are around 150 fs, which are obtained from the cross-correlation measurement with a reverse-biased 280-nm light-emitting diode as the twophoton absorption photo-detector. Such pulses are used to perform nondegenerate pump-probe experiments on an InGaN thin film, in which indium-rich nano-clusters and compositional fluctuations have been identified. Relaxation of carriers from the pump level to the probe one through the scattering-induced local thermalization (<1 ps) and then the carrier-transport-dominating global thermalization (in several ps) processes is observed.

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Section: Basic Materials Nano-structure and Optical Properties Of The supporting

confidence: 85%

Section: Basic Materials Nano-structure and Optical Properties Of The supporting

confidence: 85%

Section: Basic Materials Nano-structure and Optical Properties Of The mentioning

confidence: 99%

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Non-degenerate fs pump-probe study on InGaN with multi-wavelength second-harmonic generation

Wang¹,

Lu²,

Chen³

et al. 2005

Opt. Express

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“…These results yield better material characteristics for DH200. Most of the studies have pointed out the contribution of the strain relaxation from critical thickness of InGaN growth [28,31,32]. One of possible ways about the strain relaxation may come from higher temperature (900°C) GaN capping layer growth.…”

Section: Resultsmentioning

confidence: 99%

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

et al. 2014

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Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has a layer of InGaN thin film (thicknesses, 25, 50, 100, and 200 nm) grown on an uGaN film (thickness, 2 μm). The DH samples are distinguished by DH uGaN film (thickness, 120 nm) grown on the InGaN layer. Reciprocal space mapping measurements reveal that the DH samples are fully strained with different thicknesses, whereas the strain in the SH samples are significantly relaxed with the increasing thickness of the InGaN film. Scanning electron microscopy results show that the surface roughness of the sample increases when the sample is relaxed. High-resolution transmission electron microscopy images of the structure of indium droplets in the DH sample indicate that the thickness of the InGaN layer decreases with the density of indium droplets. The formation of these droplets is attributed to the insufficient kinetic energy of indium atom to react with the elements of group V, resulting to aggregation. The gallium atoms in the GaN thin film will not be uniformly replaced by indium atoms; the InGaN thin film has an uneven distribution of indium atoms and the quality of the epitaxial layer is degraded.

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“…The merging of PL peaks above 150 K was attributed to carrier liquidation among the localized states and free-carrier states. The decreasing trend of high-energy peak was mainly due to the band-gap shrinkage of phonon effect [40]. As shown in Figure 4c, the PL peaks showed broader bandwidth than the SI27 sample, indicating an evident In concentration fluctuation.…”

Section: Band Gap Of Inganmentioning

confidence: 88%

Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

Nguyêñ

Feng

et al. 2019

Applied Sciences

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InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral strain relaxation in growth geometry. We present the further growth optimization and innovative characterization of InGaN layers overgrown on different structures with varying In concentrations. The photoelectrical and optical properties of the InGaN layers with/without capping GaN layer are investigated by time-resolved picosecond transient grating and temperature dependence photoluminescence. We note a 10-fold increase in carrier lifetime in the InGaN layers when the sample structure changed from PIN to single InGaN layer.

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Ultrafast carrier dynamics in an InGaN thin film

Cited by 11 publications

References 20 publications

Non-degenerate fs pump-probe study on InGaN with multi-wavelength second-harmonic generation

Non-degenerate fs pump-probe study on InGaN with multi-wavelength second-harmonic generation

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

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