Undamped inductive switching of integrated quasi-vertical DMOSFETs

Constapel, R.; Shekar, Meera; Williams, Rafell

doi:10.1109/ispsd.1996.509485

Cited by 7 publications

(2 citation statements)

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“…In CMOS technology, the main usage of the snapback characteristic is to sink high current for electrostatic discharge (ESD) event or unclamp inductance switching (UIS) [2]. In order to pass the required ESD level, the ESD protection device is usually a large dimension device.…”

Section: Introductionmentioning

confidence: 99%

The direct evidence of substrate potential propagation in a gate-grounded NMOS

Yang

Chen

et al. 2010

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

The direct evidence of substrate potential propagation in a gate-grounded NMOS

Yang

Chen

et al. 2010

Solid-State Electronics

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“…The first one is the unclamped inductive switching [1] caused by turning off the driver rapidly. The second one is the diode recovery stress [2] caused by the rapid commutation of the current of the parasitic diode in the output transistor from forward to reverse bias.…”

Section: Introductionmentioning

confidence: 99%

Low-side driver's failure mechanism in a class-D amplifier under short circuit test and a robust driver device

Lee

Shih

Ong

et al. 2010

2010 IEEE International Reliability Physics Symposium

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The failure mechanism in a class-D audio amplifier under shortcircuit test is analyzed. The damage, always in the low-side driver, is due to high current induced thermal run-away, which occurs during the shutdown after the over-current is detected. However, this high current doesn't come from the over-current itself since the current is limited to below that the transistor in the class-D amplifier can sustain. Instead, the damage is caused by the displacement current when there is a large voltage change at the output of the class-D amplifier. Although the shutdown circuit is designed to prevent the high current flowing through the transistors of the class-D amplifier, it cannot prevent the current coming from the class-D amplifier itself. To eliminate the damage, the output transistors should be designed robust enough to against the low-pass filter induced large voltage swing.

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