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The forward blocking characteristics of lateral power devices on SOI-substrate are analyzed using two-dimensional numerical device simulation and compared with measurements of LIGBT and LDMOS devices. The critical influence of different emitter structures on the leakage current and breakdown voltage of the LIGBT are discussed in detail. Sketching the trade-off between forward blocking and on-state voltage drop, it will be shown, that a LIGBT with convenient shorted anode can have a similar blocking characteristic compared to the LDMOS without sacrificing its superior on-state behaviour, even at temperatures up to 225'C.

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This investigation explores the unclamped inductive switching (UIS) performance and failure mechanisms of 6OV quasi-vertical N-channel DMOSFETs through measurement and numerical device simulation. The non-uniform current distributions that arise inside the DMOS during UIS are analyzed and the effects of local self-heating are investigated.