Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments

Abstract

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al 2 O 3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300 ∘ C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages ( FORM , SET , and RESET ) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic -measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the OFF / ON ratio is around 4-6 orders of magnitude and is formed at gate voltages of g < 4 V. In unipolar mode, a gradual reduction in SET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al 2 O 3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

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“…1d. Hysteresis switching behavior with the increase in V DSmax was taken to be indicative of memristive switching between states of high and low conductance, similar to the switching in oxide-based memristors caused by the initial formation of conductive filaments due to voltage application, known as the forming process [25][26][27] .…”

Ultrathin Anion Conductors Based Memristor

“…Considering the exchangeability of anions between layers and abundant metal hosts, LDH species may possess high potential for superior performance to some TMDC materials. Moreover, the metal-oxides materials [39,[46][47][48][49][50][51][52] displayed interestingly positive correlation (region III), which may indicate limited ON/OFF ratio under low V set . Therefore, LDH could serve as a promising balance candidate for achieving high switching performance under low set process.…”

The Resistive Switching Behavior of Al/Chitosan-Graphene Oxide/FTO Structure

“…Figure 2 shows the Raman spectra of CS, CS-GO, and GO. Three peaks were observed in the GO spectrum and labeled as D band at ~1329 cm -1 , G band at ~1570 cm -1 , and 2D band at ~2656 cm -1 [8,9]. The D band is attributed to defects and disturbances in the hexagonal graphite layers, which is characteristic of the inplane stretching motion of sp 2 carbon atoms [10].…”

“…Resistive random access memory (RRAM) is one candidate for next-generation information storage due to its high speed, long retention time with low power consumption, and simple structure [2,3]. Different materials such as organics, inorganics, transition metal dichalcogenides, metal-organic frameworks, and hybrid materials [4][5][6][7][8][9][10][11][12] have been utilized in RRAM devices to demonstrate their potential applications in data storage.…”