Unipolar complementary bistable memories using gate-controlled negative differential resistance in a 2D-2D quantum tunneling transistor

Abstract

We demonstrate a novel quantum device, the double electron layer tunneling transistor (DEL'IT). The DEL'lT's operating principle is based on the gate-control of 2D-2D resonant tunneling between the two electron layers in an AlGaAs/GaAs double quantum well heterostructure. Unlike other quantum transistors, the DEL'IT does not require small lateral dimensions, but is entirely planar in configuration, enabling ease in fabrication. We demonstrate static memories at 77 K, and unipolar complementary static memories at 1.5 K, using half as many transistors as conventionally required.

Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures

“…An attribute essential to semiconductor heterostructures’ device functionality, but which remains largely unexplored for most vdW heterostructures, is the coupling and transport along the vertical axis. Interlayer momentum-conserving (resonant) tunneling in rotationally aligned vdW heterostructures may enable novel device functionality for beyond CMOS low-power, high-speed logic, − and resonant tunneling in double layers separated by a tunnel barrier provides a direct measurement of interlayer coupling and the quantum state lifetime . Recent progress in realization of twist-controlled vdW heterostructures − ,,, with precise rotational alignment between 2D layers opens interesting avenues to probe new physics and device functionalities.…”

Double electron layer tunnelling transistor (DELTT)

“…Using a single DELTT and a load resistor, we demonstrated bistable memories at 1.5 K. By placing two DELTTs in series, we also demonstrated a unipolar complementary memory with relatively low current in both memory states. Elsewhere we report on high electron density single-DELTT memories operating at 77 K [12] and the use of the DELTT to construct digital logic gates and gate-controlled oscillators [13].…”

Quantum-Inspired Computing: Can it be a Microscopic Computing Model of the Brain?

“…As indicated in these equations, both superposition (addition) and multiplications are involved in the cubit Fredkin gate. The Fredkin gate is a universal classical gate with constant ancilla inputs 28 guides and utilizes lateral tunneling transistor structure [40][41][42] , with energy diagram for lateral tunneling transistor in Fig. 6 (c).…”