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Yugova, I. A.; Greilich, A.; Yakovlev, D. R.; Kiselev, A. A.; Bayer, М.; Петров, В. В.; Dolgikh, Yu. K.; Reuter, D.; Wieck, A. D.

doi:10.1103/physrevb.75.245302

Cited by 136 publications

(132 citation statements)

References 35 publications

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“…The value of this spacing can be estimated using the anisotropy of the electron g-factor, i.e., the difference between its longitudinal (g e, ) and transverse (g e,⊥ ) components. It is well known that the g-factor of an electron confined in a quantum dot is strongly anisotropic, 44,65,66 and the value of that anisotropy is directly related to the energy spacing between heavy-and light-hole states. Taking for the experimental values of g e, and g e,⊥ their relative difference (g e,⊥ − g e, )/g e, ≈ 40% and using formulae of Ref.…”

Section: Discussionmentioning

confidence: 99%

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Durnev¹,

Glazov²,

Ivchenko³

et al. 2013

Phys. Rev. B

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We present a microscopic theory of the magnetic field induced mixing of heavy-hole states ±3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.

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Section: Discussionmentioning

confidence: 99%

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Durnev¹,

Glazov²,

Ivchenko³

et al. 2013

Phys. Rev. B

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“…(21) and (22), and by 2 for Eqs. (20) and (23). We therefore consider 5 orbital momentum projections (k ϕ = 0, ±1, ±2) to describe the magnetic-field-induced admixture of the light-hole exciton states to the observed heavy-hole exciton states with k ϕ = 0.…”

Section: B Step 2: the Total Hamiltonian Diagonalization In Finite Bmentioning

confidence: 99%

“…For the GaAs, the electron g-factor, g e = −0.44 [23]. The hole g-factors, which we use for the calculations, are connected to the Luttinger parameter κ as [43]:…”

Section: Modelingmentioning

confidence: 99%

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Inversion of Zeeman splitting of exciton states in InGaAs quantum wells

et al. 2016

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Zeeman splitting of the quantum confined states of excitons in the InGaAs quantum wells (QWs) is experimentally found to strongly depend on the quantization energy. Moreover, it changes its sign when the quantization energy increases with the decrease of the QW width. In the 87-nm QW, the sign change is observed for the excited quantum confined states, which are above the ground state only by a few meV. A two-step approach for the numerical solution of two-particle Schrödinger equation with taking into account for the Coulomb interaction and the valence-band coupling is used for theoretical justification of the observed phenomenon. The calculated variation of the g-factor convincingly follows the dependencies obtained in the experiments.

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“…[9][10][11][12][13]t h eg factor is shown to be strongly influenced by the quantum confinement in the GaAs QW and has an anisotropy with respect to the magnetic field direction. The origin of the well width dependence of the g factor is the penetration of the electron wave function into the AlGaAs barrier layer.…”

Section: Introductionmentioning

confidence: 99%

Tuning the electrically evaluated electron Landégfactor in GaAs quantum dots and quantum wells of different well widths

et al. 2014

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Tuning the electrically evaluated electron Landé g factor in GaAs quantum dots and quantum wells of different well widths Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1103/PhysRevB.90.235310 Physics, 90, 23, 2014-12-11 PHYSICAL REVIEW B 90, 235310 (2014 Tuning the electrically evaluated electron Landé g factor in GaAs quantum dots and quantum wells of different well widths We evaluate the Landé g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Landé electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magnetotransport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Landé electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs. Physical Review B -Condensed Matter and Materials

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Universal behavior of the electrongfactor inGaAs∕AlxGa1−

Cited by 136 publications

References 35 publications

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Inversion of Zeeman splitting of exciton states in InGaAs quantum wells

Tuning the electrically evaluated electron Landégfactor in GaAs quantum dots and quantum wells of different well widths

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