Unpredicted electron injection in CdS/CdSe quantum dot sensitized ZrO2 solar cells

Greenwald, Shlomit; Rühle, Sven; Shalom, Menny; Yahav, Shay; Zaban, Arie

doi:10.1039/c1cp22290b

Cited by 34 publications

(24 citation statements)

References 43 publications

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“…Similar CdS/CdSe co‐sensitized solar cells have also been reported on CdS/CdSe‐sensitized TiO 2 nanotube/nanowire arrays,78, 79 mesoporous TiO 2 films,80 SnO 2 particle films,81 and CdS/CdSe sensitized ZrO 2 porous films 82a. Fuke and co‐workers demonstrated that ≈100% internal quantum efficiency of photon‐to‐electron conversion can be achieved in butylamine‐capped CdSe QD‐sensitized TiO 2 solar cells by devices utilizing an aqueous Li 2 S electrolyte 82b…”

Section: Novel Properties and Applications Of Cdsesupporting

confidence: 75%

Growth and Device Application of CdSe Nanostructures

Zhao

Fang

2012

Adv Funct Materials

130

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Inorganic semiconductor nanostructures have attracted increasing interest in recent years because of their distinguishable role in fundamental studies and technical applications, mainly due to their size-and shape-dependent properties and fl exible processing methods. The use of such nanostructures in optic, optoelectric, and piezoelectric prospects is expected to play a crucial role in future nanoscale devices. Cadmium selenide (CdSe), a well-known direct bandgap II-VI semiconductor in which the bandgap favors absorption over a wide range of the visible spectrum, has been a promising material for applications in such fi elds as photodetectors, fi eld-effect transistors (FETs), fi eld emitters, solar cells, light-emitting diodes (LEDs), memory devices, biosensors, and biomedical imaging. The research on CdSe nanostructures has made remarkable progress in the last few years. The research activities on CdSe nanostructures including various methods for the synthesis of CdSe nanostructures and the unique properties and device applications of these nanostructures are reviewed. Potential future directions of this research area are also highlighted.

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Section: Novel Properties and Applications Of Cdsesupporting

confidence: 75%

Growth and Device Application of CdSe Nanostructures

Zhao

Fang

2012

Adv Funct Materials

130

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“…However, the flat band potential of metal oxides is influenced by the structure of the material and the reported flab band positions for BiVO 4 is in a large range of values, from approximately 0.7 to 0.3 V (vs. Ag/AgCl, pH 5.8-7) [24][25][26]. In addition, an efficient electron injection has also been observed in CdS/CdSe sensitized ZrO 2 solar cells despite the much higher conduction band edge of ZrO 2 [27]. The photoelectrons accumulation in the quantum dots is the only reasonable interpretation.…”

Section: Photovoltaic Performance Of the Liquid Junction Solar Cells mentioning

confidence: 99%

BiVO4 semiconductor sensitized solar cells

Zhu

Chen

et al. 2015

Sci. China Chem.

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Semiconductor sensitized solar cells (SSSCs) are promising candidates for the third generation of cost-effective photovoltaic solar cells and it is important to develop a group of robust, environment friendly and visible-light-responsive semiconductor sensitizers. In this paper, we first synthesized bismuth vanadate (BiVO 4 ) quantum dots by employing facile successive ionic layer adsorption and reaction (SILAR) deposition technique, which we then used as a sensitizer for solar energy conversion. The preliminary optimised oxide SSSC showed an efficiency of 0.36%, nearly 2 orders of magnitude enhancement compared with bare TiO 2 , due to the narrow bandgap absorption of BiVO 4 quantum dots and intimate contact with the oxide substrate. This result not only demonstrates a simple method to prepare BiVO 4 quantum dots based solar cell, but also provides important insights into the low bandgap oxide SSSCs. solar cells, bismuth vanadate, successive ionic layer adsorption reaction deposition, sensitizer

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“…No evidences related to electron injection from Ru dye and PbS QDs are found so far. But electrons from CdS/CdSe QDs can be injected into porous ZrO 2 thin film and further transported to surface of conducting substrate [128].…”

Section: Alternative Photo-anodic Materialsmentioning

confidence: 99%

“…Recently, some other types of WBG SC have been used by different research groups e.g. Zn 2 SnO 4 , ZrO 2 , Nb 3 O 7 F, BaTiO 3 , SrTiO 3 [127][128][129][130][131]. SnO 2 has higher electron mobility and much more negative conduction band minimum than TiO 2 .…”

Section: Alternative Photo-anodic Materialsmentioning

confidence: 99%