1997
DOI: 10.1109/16.641367
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Use of gas as low-k interlayer dielectric in LSI's: Demonstration of feasibility

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Cited by 32 publications
(18 citation statements)
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“…This includes fabrication of air-gaps in electrical interconnects, MEMS, microfluidic devices, and micro-reactors. The formation of air-gaps is important in electrical interconnects because it lowers the effective dielectric constant of the matrix [1]- [5]. The fabrication of buried air-channels is useful for the creation of vias in multi-level wiring boards, micro-display boards with high resolution, and ink-jet printer heads.…”
Section: Introductionmentioning
confidence: 99%
“…This includes fabrication of air-gaps in electrical interconnects, MEMS, microfluidic devices, and micro-reactors. The formation of air-gaps is important in electrical interconnects because it lowers the effective dielectric constant of the matrix [1]- [5]. The fabrication of buried air-channels is useful for the creation of vias in multi-level wiring boards, micro-display boards with high resolution, and ink-jet printer heads.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, some recent studies [18][19][20][21] proposed methods for utilizing air as ILDs. These novel approaches, however, fall short of being satisfactory in terms of the semiconductor industry standards.…”
Section: Introductionmentioning
confidence: 99%
“…2c and d. In Fig. 2f, all sacrificial layers are removed by an etching process such as described in [2] or [3]. A top nonconformal dielectric is deposited to seal the arch-shaped air pocket.…”
mentioning
confidence: 99%
“…The air gaps of non-uniform size and shape were made by inter-metal dielectric (IMD) deposition. The NURA process [2] uses O 2 gas diffused through a thin bridge layer (SiO 2 ) to react with the underlying carbon layer at 4508C. Chen reported an air gap interconnect scheme using the copper dual damascene process.…”
mentioning
confidence: 99%