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On-chip integration of III-V laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%. The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.

A study has been done on the crystallographic effects of under-metal planes on Al(111) orientation in layered Al interconnects (Al/Ti, Al/TiN/Ti), and the dominant factor for electromigration was clarified in the region below a half-micron line width. It was found that Al(111) preferred orientation is strongly dependent on the crystal structure and process sequence of the under-metal, and universally determined by the difference between the spacing of Al(111) plane and under-metal planes. Moreover, it was found that the electromigration endurance tends to improve in proportion to the degree of Al(111) preferred orientation. Therefore, the formation of an under-metal layer with an appropriate plane whose spacing is close to that of the Al(111) plane is the most significant criterion for the realization of highly oriented Al(111) planes and hence highly reliable ULSI interconnects.

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