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A fully integrated aluminum dual damascene process is presented. The process incorporates a double silicon nitride etch stopper structure to achieve better etching control. Use of silicon nitride etch stoppers usually results in increased wire capacitance. However, the new process presented here succeeds in significantly reducing the impact of the silicon nitride stopper layers on wire capacitance by arranging for the stopper layers to be away from the wire corners. The integration of this process with a previously reported aluminum reflow process to obtain an integrated aluminum dual damascene process is described and the results obtained are discussed.

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