UV-enhanced acetone gas sensing of Co3O4-decorated ZnS nanorod gas sensors

Park, Sunghoon; Sun, Guang–Zhen; Kim, Soohyun; Lee, Sang‐Min; Lee, Chongmu

doi:10.1007/s13391-015-5051-8

Cited by 12 publications

(3 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For this reason, lots of efforts have been put into the optimization of metal oxide sensing materials such as employing nano porous sensing materials [23][24][25], doping [26,27], optimizing the grains of sensing materials [28,29]. UV light irradiation method was also proposed to enhance the sensitivity [30][31][32][33][34][35].…”

Section: Introductionmentioning

confidence: 99%

A high-performance structure for the bulk acoustic wave metal oxide semiconductor gas sensor

Zhao

Tang

2019

Smart Mater. Struct.

View full text Add to dashboard Cite

It is known that bulk acoustic wave (BAW) can increase the sensitivity of a metal oxide semiconductor gas sensor and decrease its lower detection limit by at least one order of magnitude. However, the structure of BAW metal oxide semiconductor gas sensors has been bulky and its energy efficiency has been low. In this work, a new structure to form BAW metal oxide semiconductor gas sensors is proposed and investigated. In the structure, the metal case which is usually used to protect the sensing resistor, is employed to excite the working ultrasonic-field. A piezoelectric ring is bonded onto the bottom of the metal case to serve as the vibration excitation source of the whole system. The structure not only makes the gas sensor system compact and miniaturized by reducing the volume and weight of vibration excitation unit by more than 99%, but also decreases power consumption of the ultrasonic transducer by more than 98% for the same ultrasonic effect. Meanwhile the ultrasonic system can enhance the sensing response of a commercialized SnO2 gas sensor by one order of magnitude.

show abstract

Section: Introductionmentioning

confidence: 99%

A high-performance structure for the bulk acoustic wave metal oxide semiconductor gas sensor

Zhao

Tang

2019

Smart Mater. Struct.

View full text Add to dashboard Cite

show abstract

“…The nano era has been, a tremendous increase in the number of reports discussing methods of fabricating and characterizing a variety of nanomaterials and nanostructures [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Among these, a new generation of gas sensors based on graphene materials such as graphene oxide, and reduced graphene oxide (RGO) have drawn attention, due to their room temperature operation, facile synthesis, and the ease with which their electrical properties can be tailored [21].…”

Section: Introductionmentioning

confidence: 99%

Effect of E-Beams Irradiation Dose on the Sensing Properties of Pt-Functionalized Reduced Graphene Oxides Following Annealing of the 6 nm-Thick Pt Layer

Kwon¹,

Mirzaei

Na³

et al. 2017

Korean J. Met. Mater.

View full text Add to dashboard Cite

Pt-functionalized RGO samples were prepared and subsequently irradiated with 2-MeV electron beams (e-beams). The effect of e-beam dose on the structural, electrical, and gas sensing properties of the samples was investigated. E-beam irradiation was found to induce significant microstructural changes in the Pt-functionalized RGO. Measurements of NO2 sensing at room temperature showed that the dose of 100 kGy led to better NO2 sensing properties compared to those of unirradiated sensors. On the other hand, the dose of 500 kGy appeared to be excessive, leading to extensive damage of the RGO structure and a significant reduction in the response to NO2 gas. E-beam irradiation can be beneficial for improving the gas sensing of Pt-functionalized RGO, but its dose needs to be optimized to obtain the best sensing properties. † (

show abstract

“…在可见光波长范围内具有高折射率和高透光率以及良好的化学和热稳定性，其原材料丰富且价格低廉 [10][11] 。因此，它也被广泛应用于红外激光器和场效应晶体管(FET) 、光催化剂、传感器等光电子领域 [12][13] 。近十年来，国内外针对 ZnS 研究进行了广泛的报道 [14][15][16] 。ZnS 薄膜是该化合物半导体材料研究和应用的重要方向之一，目前对于 ZnS 薄膜的制备方法主要有化学水浴沉积(CBD) [17 ] 、脉冲激光沉积(PLD) [18 ] 、电子束蒸发 [19 ] 、原子层沉积(ALD) [2 0 ] 和磁控溅射 [ 21 ] 。相较于其他的制备方法，磁控溅射镀膜具有膜附着力好、致密、成本低等优点。但在制备 ZnS 时，会存在不同程度的硫缺失，这会影响 ZnS 薄膜物理和化学性质。对此，P. K. Ghosh [22] 等人通过磁控溅射技术制备出 ZnS 纳米晶体薄膜，并研究薄膜光电性能和空位缺陷。Wang X [23]…”

unclassified

Effect of different sulfur pressure annealing on properties of sputtering-deposited ZnS thin films

Dang¹,

Zhang²,

Zhang³

et al. 2023

Acta Phys. Sin.

View full text Add to dashboard Cite

As a kind of wide-band gap semiconductor, ZnS has attracted extensive attention in recent years due to its excellent photoelectric performance, which has broad application prospects in solar cells, photocatalysts and sensors. In this paper, ZnS thin films were first deposited by RF magnetron sputtering, and then annealed at 600℃ and different sulfur pressures. The crystal structure, surface morphology, grain size, composition, transmittance and defects of ZnS thin films were analyzed by XRD, XRD, SEM, EDS, UV-vis transmission spectra, positron annihilation Doppler broadening spectroscopy (DBS). The results show that the crystallinity of ZnS films can be improved by annealing in sulfur atmosphere, and the optical band gap of ZnS films after annealing is 3.43-3.58 eV. When the sulfur pressure is higher than 0.49atm, the sulfur interstitial atoms in the ZnS and the elemental sulfur on the surface reduce the transmittance of the film in the visible region. The DBS results also showed that the defect concentration of ZnS films decreased gradually from the surface layer to the inner layer, and the defect of ZnS films decreased with the increase of sulfur pressure. At the same time, the 3γ annihilation also proves that the interior of the film was relatively dense, and the open porosity of the film will increase due to vulcanization. Adsorbed sulfur occupies the position of sulfur vacancy defect in the crystal through internal diffusion, which leads to the decrease of defect concentration and the improvement of film quality.

show abstract

UV-enhanced acetone gas sensing of Co3O4-decorated ZnS nanorod gas sensors

Cited by 12 publications

References 49 publications

A high-performance structure for the bulk acoustic wave metal oxide semiconductor gas sensor

A high-performance structure for the bulk acoustic wave metal oxide semiconductor gas sensor

Effect of E-Beams Irradiation Dose on the Sensing Properties of Pt-Functionalized Reduced Graphene Oxides Following Annealing of the 6 nm-Thick Pt Layer

Effect of different sulfur pressure annealing on properties of sputtering-deposited ZnS thin films

Contact Info

Product

Resources

About