UV-TiO<sub>2</sub> photocatalysis-assisted chemical mechanical polishing 4H-SiC wafer

Yuan, Zewei; He, Yan; Sun, Xingwei; Wen, Quan

doi:10.1080/10426914.2017.1364855

Cited by 68 publications

(28 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While some hydroxyl radical reacts into water and oxygen, some react with single-crystal 4H-SiC to form silicon dioxide. The electrochemical reactions occurring on the cathode and anode (single-crystal 4H-SiC) can be summarized as follows [8,[33][34][35][36].…”

Section: The Mechanism Of Plasma Electrolytic Processing and Mechanical Polishingmentioning

confidence: 99%

“…In recent years, many polishing techniques based on chemical reactions have been developed for the flattening of SiC substrates, such as chemical mechanical polishing (CMP) [3], plasma-assisted polishing (PAP) [4,5], photochemically combined mechanical polishing (PCMP) [6][7][8], thermal oxidation [9,10], and so forth [11], which can obtain atom-ically flat single-crystal 4H-SiC surfaces. However, problems of low MRR and pollution still exist.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

et al. 2021

Micromachines

View full text Add to dashboard Cite

Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP) was proposed in order to polish single-crystal 4H-SiC surfaces effectively. In the PEP-MP process, the single-crystal 4H-SiC surface is modified into a soft oxide layer, which is mainly made of SiO2 and a small amount of silicon oxycarbide by plasma electrolytic processing. Then, the modified oxide layer is easily removed by soft abrasives such as CeO2, whose hardness is much lower than that of single-crystal 4H-SiC. Finally a scratch-free and damage-free surface can be obtained. The hardness of the single-crystal 4H-SiC surface is greatly decreased from 2891.03 to 72.61 HV after plasma electrolytic processing. By scanning electron microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS) observation, the plasma electrolytic processing behaviors of single-crystal 4H-SiC are investigated. The scanning white light interferometer (SWLI) images of 4H-SiC surface processed by PEP-MP for 30 s shows that an ultra-smooth surface is obtained and the surface roughness decreased from Sz 607 nm, Ra 64.5 nm to Sz 60.1 nm, Ra 8.1 nm and the material removal rate (MRR) of PEP-MP is about 21.8 μm/h.

show abstract

Section: The Mechanism Of Plasma Electrolytic Processing and Mechanical Polishingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

et al. 2021

Micromachines

View full text Add to dashboard Cite

show abstract

“…[3][4][5] At the same time, it can be widely used in the production of high temperature, high frequency and high power devices. [6,7] Ultra-smooth polishing of the SiC substrate was required atomic surface roughness. [8][9][10] The biggest problem at present was that the processing efficiency was too low on the premise of ensuring the surface quality.…”

Section: Introductionmentioning

confidence: 99%

Material Removal Rate of Double-faced Mechanical Polishing of 4H-SiC Substrate

Zhang

Yang

Qiu

2021

Preprint

View full text Add to dashboard Cite

Silicon carbide (SiC) has been a promising the-third-generation semiconductor power device material for high-power, high-temperature, substrate applications. It aims to improve the material removal rate (MRR), on the premise of ensuring the surface roughness requirements of the double-faced mechanical polishing of 6-inch SiC substrate. To obtain the relationship between any point on SiC substrate and polishing pads, the model about double-faced mechanical polishing has been built and the kinematics equations were created. Best optimized material removal rate parameters were obtained. MRR reached the maximum when speed rate of the outside ring gear to the inside sun gear m=-1, speed rate of lower plate to the inside sun gear n=5, SiC substrate distribution radius RB=75. The primary and secondary order of MRR (n>m>RB) was obtained. An accurate mathematical model of orthogonal rotary regression test of Tri-factor quadratic of MRR was established and the regression model was significant. Surface quality of SiC substrate was observed and characterized with SEM and AFM. It greatly provides a key guarantee for the next process of CMP, confirmed the importance of MRR to ultra-smooth polishing, and provides a guarantee for its application in semiconductor equipment and technology.

show abstract

“…Indepth research is needed to develop efficient and stable polishing solutions with intense chemical action. Such solutions can improve the chemical reaction on the surface of SiC to ensure synergy between chemical and mechanical action, and can thus yield a substrate with high efficiency and high surface quality (Lu et al, 2017;Yuan et al, 2018).…”

Section: Introductionmentioning

confidence: 99%

Preparation and polishing properties of water-based magnetorheological chemical finishing fluid with high catalytic activity for single-crystal SiC

Deng

Yan

et al. 2020

Journal of Intelligent Material Systems and Structures

View full text Add to dashboard Cite

A water-based high catalytic activity magnetorheological chemical finishing fluid (HCAMRCFF) was prepared and modified to enhance the chemical action strength in magnetorheological chemical finishing (MRCF) for single-crystal SiC. The fluid consisted of ferroferric oxide (Fe3O4) and chromium (Cr), deionized water (DW), polyethylene glycol (PEG) and oleic acid, and hydrogen peroxide (H2O2) as the composite catalyst particles, base carrier liquid, surfactants, and oxidant, respectively. HCAMRCFFs with different component concentrations were used to modify via evaluating their catalytic activity. Moreover, the MRCF experiments on SiC were conducted using the prepared HCAMRCFFs. The results show that the catalytic activity increases with an increase in the oxidant concentration. Furthermore, composite catalysts and composite surfactants can significantly improve their catalytic activity. The catalytic activity also increases with an increase in the concentration of composite catalysts. In the composite catalysts, increasing the Cr concentration can significantly enhance the catalytic performance. Composite surfactants can exert the relative superiority to enhance the catalytic activity. Compared with the unmodified finishing fluid, the catalytic activity of modified HCAMRCFF increases by 65.4%; the material removal rate (MRR) of SiC increases by 72.5% up to 635.621 nmh−1, and a surface with a roughness of 0.33 nm is obtained.

show abstract

UV-TiO₂ photocatalysis-assisted chemical mechanical polishing 4H-SiC wafer

Cited by 68 publications

References 34 publications

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Material Removal Rate of Double-faced Mechanical Polishing of 4H-SiC Substrate

Preparation and polishing properties of water-based magnetorheological chemical finishing fluid with high catalytic activity for single-crystal SiC

Contact Info

Product

Resources

About

UV-TiO2 photocatalysis-assisted chemical mechanical polishing 4H-SiC wafer

Cited by 68 publications

References 34 publications

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Material Removal Rate of Double-faced Mechanical Polishing of 4H-SiC Substrate

Preparation and polishing properties of water-based magnetorheological chemical finishing fluid with high catalytic activity for single-crystal SiC

Contact Info

Product

Resources

About

UV-TiO₂ photocatalysis-assisted chemical mechanical polishing 4H-SiC wafer