Vacuum deposition of dielectric films for capacitors

Siddall, Gillian

doi:10.1016/0042-207x(59)90421-x

Cited by 85 publications

(8 citation statements)

References 12 publications

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“…4(c) we show the obtained ε 1 for two resonators, with fundamentals around 2.58 GHz and 3.77 GHz and including additional harmonics. These data are consistent with the ε 1 ≈ 3.9 for SiO 2 49 .…”

Section: Experiments and Discussionsupporting

confidence: 91%

Characterizing dielectric properties of ultra-thin films using superconducting coplanar microwave resonators

Ebensperger

Ferdinand

Koelle

et al. 2019

Review of Scientific Instruments

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We present an experimental approach for cryogenic dielectric measurements on ultra-thin insulating films. Based on a coplanar microwave waveguide design we implement superconducting quarter-wave resonators with inductive coupling, which allows us to determine the real part ε 1 of the dielectric function at GHz frequencies and for sample thicknesses down to a few nm. We perform simulations to optimize resonator coupling and sensitivity, and we demonstrate the possibility to quantify ε 1 with a conformal mapping technique in a wide sample-thickness and ε 1 -regime. Experimentally we determine ε 1 for various thin-film samples (photoresist, MgF 2 , and SiO 2 ) in the thickness regime of nm up to µm. We find good correspondence with nominative values and we identify the precision of the film thickness as our predominant error source. Additionally we demonstrate a measurement of ε 1 (T ) vs. temperature for a SrTiO 3 bulk sample, using an in-situ reference method to compensate for the temperature dependence of the superconducting resonator properties.

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Section: Experiments and Discussionsupporting

confidence: 91%

Characterizing dielectric properties of ultra-thin films using superconducting coplanar microwave resonators

Ebensperger

Ferdinand

Koelle

et al. 2019

Review of Scientific Instruments

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“…This phenomenon is so called "self-healing". 11) SEM micrographs of the surface morphology of MOS capacitors for both type-A and type-B are shown in Fig. 4.…”

Section: Tzdb Resultsmentioning

confidence: 99%

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors

Sato

Hiroi

Yamabe

et al. 2014

Jpn. J. Appl. Phys.

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We observed characteristic "carpet-bombing-like concaves" after time-to-zero dielectric breakdown (TZDB) and time-dependent dielectric breakdown (TDDB) measurement for silicon carbide metal-oxide-semiconductor capacitors with a thermally grown oxide. A multiple breakdown model is proposed to explain the formation mechanism of the carpet-bombing-like concaves in TZDB measurement. Results and analysis of our TDDB measurements consistently support our multiple breakdown model.

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“…Since the metal evaporates around such breakdown spot, it does not short capacitor’s electrodes 9 . The above phenomenon has been previously referred to as the self-healing breakdown 7–10, 40 . The timescale of the breakdown event, τ B , can be estimated from the energy balance equation E m = E J , where E m is the energy required to melt the material inside a crater, and E J is the Joule heating generated during the breakdown.…”

Section: Discussionmentioning

confidence: 99%

“…This phenomenon, called the breakdown conditioning, is attributed to the destruction of the surface defects such as protrusions, which are usually responsible for the breakdown. Similarly, in capacitors with certain dielectrics 7 – 10 and thin metal electrodes breakdowns do not unavoidably cause shorts. On breakdown the metal could melt or evaporate locally around the breakdown hole, insulating it from the rest of the capacitor.…”

Section: Introductionmentioning

confidence: 99%

Recovery of Alumina Nanocapacitors after High Voltage Breakdown

Belkin

Bezryadin

Hendren

et al. 2017

Sci Rep

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Breakdown of a dielectric material at high electric fields significantly limits the applicability of metal-dielectric-metal capacitors for energy storage applications. Here we demonstrate that the insulating properties of atomic-layer-deposited Al2O3 thin films in Al/Al2O3/Al trilayers can recover after the breakdown. The recovery has been observed in samples with the dielectric thickness spanning from 4 to 9 nm. This phenomenon holds promise for a new generation of capacitors capable of restoring their properties after the dielectric breakdown. Also, if employed in capacitor banks, the recovery process will ensure that the bank remains operational even if a breakdown occurs.

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Vacuum deposition of dielectric films for capacitors

Cited by 85 publications

References 12 publications

Characterizing dielectric properties of ultra-thin films using superconducting coplanar microwave resonators

Characterizing dielectric properties of ultra-thin films using superconducting coplanar microwave resonators

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors

Recovery of Alumina Nanocapacitors after High Voltage Breakdown

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