Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage

Wang, J.; Cao, Lina; Xie, Jinqiao; Youtsey, C.; McfCarthy, R.; Guido, L. J.; Fay, Patrick

doi:10.1109/drc.2018.8442215

Cited by 5 publications

(4 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To avoid the mesa sidewall related leakage currents and associated complications described above, fully vertical p‐n diodes with backside cathode contacts and an ion‐implantation‐based edge termination with sputtered SiNx surface passivation layer have been investigated . To compensate the surface p‐type layer, a nitrogen triple implant was used.…”

Section: Methodsmentioning

confidence: 99%

“…A triple nitrogen implant was used to partially compensate the p‐GaN layer, leaving a thin partially compensated edge termination portion in the regime between the anode and the edge termination etch ring (light blue in Figure b). This optimized thin partially compensated p‐GaN (≈45 nm in this work) was used to manage the lateral electric field distribution near the p + ‐n junction to achieve high breakdown voltage, using a similar working principle to that of reduced surface field (RESURF) diodes . A shallow trench ring was etched using inductively coupled plasma reactive ion etching (ICP‐RIE) to establish the outer boundary of the edge termination structure.…”

Section: Methodsmentioning

confidence: 99%

“…To explore the impact and benefits of ELO for GaN power diodes, several device designs and process flows were explored. PN junction diodes with either etched‐mesa isolation or ion‐implant based edge termination were developed and compared to evaluate the impact of ELO processing on device performance and material quality. In this work, we report the demonstration of ion‐implant isolated vertical GaN p‐n diodes lifted off from bulk GaN substrates; these devices show no significant electrical performance penalty compared to devices without ELO processing.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates

Wang

McCarthy

Youtsey

et al. 2018

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

Ion-implant isolated vertical GaN p-n junction diodes fabricated with epitaxial lift-off (ELO) from GaN substrates are demonstrated. For the ELO process, a band-gap selective photoelectrochemical (PEC) wet etch with a pseudomorphic InGaN release layer is utilized. Compared with devices isolated using mesa etching, the ion-implant isolated devices exhibit more ideal forward current-voltage characteristics and lower leakage currents. Devices are also compared with and without ELO processing. Devices measured after ELO processing and mounting to metallized carrier substrates show similar electrical performance to GaN-on-GaN control samples without ELO processing. No indication of material quality degradation is found on the ELO devices. The ELO devices exhibit turn-on voltages of 3.15 V (at a current density of 100 A cm À2 ), with specific on resistance (R on ) of 0.52 mΩ cm 2 at 4.8 V and breakdown voltage (V br ) approximately of 750 V.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates

Wang

McCarthy

Youtsey

et al. 2018

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…By lifting off and transferring a high-power vertical pn junction to a copper heat sink (instead of the conventional die attach to the back of the GaN substrate), a 30% reduction in thermal resistance was achieved [7]. In addition, it was found that for a 10 A forward current on a full-thickness GaN substrate, a diode diameter of 1 mm was required [12]; for the same current-carrying capability, a device processed using PEC epitaxial lift-off and transfer was reduced to 550 µm in diameter [13]. This corresponds to a substantial reduction in device area by 70%, and much more efficient use of the GaN substrates.…”

Section: Device Applications and Demonstrationsmentioning

confidence: 99%

(Invited) Epitaxial Lift-Off of GaN and Related Materials for Device Applications

et al. 2019

View full text Add to dashboard Cite

The use of epitaxial lift-off with GaN and other III-N based materials offers substantial benefits for devices across a wide range of applications. Examples include devices for power control and conversion, microwave and millimeter-wave transmitters and receivers, sensors, LEDs and detectors, and many others. For these applications, epitaxial lift-off provides a key additional degree of freedom in fabrication processing and integration, offering potential benefits to the electrical, thermal, and optical properties of devices, as well as enhancing the ability of these devices to be heterogeneously integrated with other materials at low cost. We provide here an overview of this technology and its benefits.

show abstract

High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates

Wang

McCarthy

Youtsey

et al. 2018

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

High-performance vertical GaN-based p-n junction diodes fabricated using bandgap selective photoelectrochemical etching-based epitaxial liftoff (ELO) from bulk GaN substrates are demonstrated. The epitaxial GaN layers and pseudomorphic InGaN release layer were grown by MOCVD on bulk GaN substrates. A comparison study was performed between devices after liftoff processing (after transfer to a Cu substrate) and nominally identical control devices on GaN substrates without the buried release layer or ELO-related processing. ELO and bonded devices exhibit nearly identical electrical performance and improved thermal performance, compared with the control devices on full-thickness GaN substrates. The breakdown voltage, ideality factor, and forward turn-ON performance were found to be nearly identical, indicating that the transfer process does not degrade the quality of the p-n junctions. The devices exhibit turn-ON voltages of 3.1 V at a current density of 100 A/cm 2 , with a specific ON-resistance (R ON) of 0.2-0.5 m • cm 2 at 5 V and a breakdown voltage (V br) of 1.3 kV. Both optical and electrical characterization techniques show that the thermal resistance of ELO devices bonded to a Cu carrier is approximately 30% lower than that for control devices on GaN substrates. Index Terms-GaN p-n junctions, epitaxial lift-off, thermal resistance. I. INTRODUCTION V ERTICAL GaN (and related III-N materials)-based devices are promising for power electronics due to both the exceptional properties of the III-N material system and the advantages of vertical device architectures [1]-[7]. However, vertical GaN-based device performance is often limited due to the use of lattice-mismatched foreign substrates, resulting in high dislocation densities as well as limited thermal conductivity for heat removal [8], [9].

show abstract

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage

Cited by 5 publications

References 2 publications

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates

(Invited) Epitaxial Lift-Off of GaN and Related Materials for Device Applications

High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates

Contact Info

Product

Resources

About