Very low-loss high frequency lateral-mode resonators on polished ultrananocrystalline diamond

Fatemi, Hedy; Abdolvand, Reza; Zeng, Hongjun; Carlisle, John A.

doi:10.1109/fcs.2011.5977296

Cited by 8 publications

(6 citation statements)

References 9 publications

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“…The silicon provides an improvement in mechanical quality factor [23], however, this comes at the cost of the effective electromechanical coupling factor. The incorporation of silicon, and other high quality materials [24], within the transformer is also attractive due to larger power handling with its introduction into the resonator stack [25]. Measurements in [6] showed that the power handling of the devices similar to the ones reported herein falls within the power range of interest.…”

mentioning

confidence: 71%

“…In evaluating (24) and (29), the efficiency will be largely impacted by the electrical quality factor of the input port whereas the voltage gain is impacted by the electrical quality factor at the output port.…”

Section: Load Dependence Of Efficiency and Voltage Gain Including mentioning

confidence: 99%

“…The efficiency expression which captures the load dependence as well as the electrical losses is described in (24), which is shown at the bottom of the next page. The load dependent expression, α, is described by…”

Section: Load Dependence Of Efficiency and Voltage Gain Including mentioning

confidence: 99%

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Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Bedair

Pulskamp

Polcawich

et al. 2013

J. Microelectromech. Syst.

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This paper reports the performance of leadzirconate-titanate (PZT)-on-silicon electromechanical resonators as thin-film piezoelectric transformers. The PZT-on-silicon resonators rely on the odd harmonics of the contour lengthextensional modes to provide a convenient means for voltage and current transformations with a single layer of piezoelectric PZT. The resistive-load-dependent voltage gains and efficiencies are derived along with the peak efficiencies and open circuit voltage gains. The models of efficiency and voltage gain are compared to the experimental measurements of fabricated PZTon-silicon piezoelectric transformers with 2, 4, and 10 μm of device silicon. The resonant frequencies of the devices range between 14 and 19 MHz. Peak efficiencies as high as 62% are measured and open circuit voltage gains as high as 5.7 are extracted from the measurements. The measured efficiencies with 50-loads compare within 14% of the models on average (25% peak error). The extracted open-circuit voltage gains and their models compare within 22% on average (67% peak error). The trade between the load-dependent efficiencies and voltage gains are also presented for the n =3, 5, 9, and 13 harmonics. [2012-0339]

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confidence: 71%

Section: Load Dependence Of Efficiency and Voltage Gain Including mentioning

confidence: 99%

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Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Bedair

Pulskamp

Polcawich

et al. 2013

J. Microelectromech. Syst.

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“…The details of the processing steps can be found in the earlier published papers from our group [2,9] and is briefly described in the caption of Figure 2. …”

Section: Fabricationmentioning

confidence: 99%

Fracture limit in thin-film piezoelectric-on-substrate resonators: Silicon VS. diamond

Fatemi

Abdolvand

2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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In this work, lateral-extensional thin-film piezoelectricon-substrate (TPoS) resonators, fabricated on both silicon and diamond, are driven beyond their bifurcation point in order to study the maximum allowable energy density before the resonator fractures. A method is presented to measure the stored energy of the resonator at different drive levels. The average measured critical energy density of the resonator (the stored energy at bifurcation) on silicon substrate is ~5.2×10 5 J/m 3 for a specific resonator design while it is ~2.7×10 5 J/m 3 for a similar device fabricated on ultrananocrystalline diamond. On the other hand, the resonator on diamond withstands energy densities more than 2 times larger than the resonator on silicon before devices fracture and fail mechanically.

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“…These layers are stacked on top of a substrate ( Figure 1). Such resonators usually offer higher quality factors and better power handling compared to purely piezoelectric resonators [9,10]. In order to effectively excite higher order harmonics in the resonant structure, the top electrodes are patterned to form interdigitated fingers.…”

Section: Introductionmentioning

confidence: 99%

High-frequency thin-film piezoelectric transformers

Fatemi

Abdolvand

2012

2012 IEEE International Frequency Control Symposium Proceedings

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A voltage step-up/impedance transformer is presented which operates by modifying the electrode configuration of lateral-extensional mode thin-film piezoelectric-on-substrate (TPoS) resonators. The individual electrode pairs that cover the stress concentration areas of a 10 th order harmonic 30MHz resonator are connected in series at the output port to effectively unbalance the input and output impedances. After inductive cancelation of the electrode/pad capacitances at the output port, a voltage gain of +10.4 dB is achieved in such transformers. Additionally, an impedance transformation ratio of 19:1 is obtained.

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Very low-loss high frequency lateral-mode resonators on polished ultrananocrystalline diamond

Cited by 8 publications

References 9 publications

Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Thin-Film Piezoelectric-on-Silicon Resonant Transformers

Fracture limit in thin-film piezoelectric-on-substrate resonators: Silicon VS. diamond

High-frequency thin-film piezoelectric transformers

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