Plasmonic materials
have optical cross sections that exceed by
10-fold their geometric sizes, making them uniquely suitable to convert
light into electrical charges. Harvesting plasmon-generated hot carriers
is of interest for the broad fields of photovoltaics and photocatalysis;
however, their direct utilization is limited by their ultrafast thermalization
in metals. To prolong the lifetime of hot carriers, one can place
acceptor materials, such as semiconductors, in direct contact with
the plasmonic system. Herein, we report the effect of operating temperature
on hot electron generation and transfer to a suitable semiconductor.
We found that an increase in the operation temperature improves hot
electron harvesting in a plasmonic semiconductor hybrid system, contrasting
what is observed on photodriven processes in nonplasmonic systems.
The effect appears to be related to an enhancement in hot carrier
generation due to phonon coupling. This discovery provides a new strategy
for optimization of photodriven energy production and chemical synthesis.