1995
DOI: 10.1016/0038-1098(95)00299-5
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Visible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor deposition

Abstract: (Rrcrived 3 April 1995 by D. Van qVck)a-SiO, films of varying stoichiometr)r have been prepared by low temperature plasma enhanced chemical vapor deposition.The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energies ranging from the ultraviolet to the near infrared have been observed. PL, infrared and X-ray diffraction on selected samples indicate formation of Si clusters in the films. The effects of anneali… Show more

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Cited by 19 publications
(8 citation statements)
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“…Previously, off-stoichiometric silicon oxide (SiO x , x o 2) thin films can often be synthesized via chemical vapor deposition. 141,142 In addition, Becher's group reported the fluorescence and polarization spectroscopy of single silicon vacancy centers in heteroepitaxial nanodiamonds on iridium using microwave plasma chemical vapor deposition. 143 Yang and co-workers have successfully fabricated the In 2 O 3 -ZnO one-dimensional nanosized heterostructures constructed by In 2 O 3 quadrangular columns and ZnO hexagonal disks by thermal chemical vapor transport.…”
Section: Chemical Vapor Depositionmentioning
confidence: 99%
“…Previously, off-stoichiometric silicon oxide (SiO x , x o 2) thin films can often be synthesized via chemical vapor deposition. 141,142 In addition, Becher's group reported the fluorescence and polarization spectroscopy of single silicon vacancy centers in heteroepitaxial nanodiamonds on iridium using microwave plasma chemical vapor deposition. 143 Yang and co-workers have successfully fabricated the In 2 O 3 -ZnO one-dimensional nanosized heterostructures constructed by In 2 O 3 quadrangular columns and ZnO hexagonal disks by thermal chemical vapor transport.…”
Section: Chemical Vapor Depositionmentioning
confidence: 99%
“…They can be prepared by sputtering in water vapor 8 or by plasma enhanced chemical vapor deposition using a gas mixture of N 2 O and SiH 4 . 9,10 The purpose of this letter is to show that the evaporation technique also permits to obtain a-SiO x thin films which present a very intense PL visible to the naked eye. In order to understand the influence of hydrogen in these materials, hydrogenated alloys were also prepared with the same elaboration technique.…”
Section: ͓S0003-6951͑98͒00124-7͔mentioning
confidence: 99%
“…The SiO x film is then annealed at high temperature (>900 °C), which causes phase separation between Si and SiO 2 with the formation of small Si nanocrystals 250. 275 Sub‐stoichiometric SiO 2 thin films are usually formed on substrates by plasma‐enhanced CVD (PECVD)276284 or PVD,284288 such as radiofrequency magnetron sputtering and plasma‐assisted sputtering. In the PECVD procedure, a combination of SiH 4 with N 2 O276280 or SiH 4 with O 2 280282 are usually used as source gases.…”
Section: Nanostructured Silicon In or On Bulk Substratesmentioning
confidence: 99%