IEEE Antennas and Propagation Society International Symposium. 1996 Digest
DOI: 10.1109/aps.1996.549911
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Voltage controlled ferroelectric lens phased arrays

Abstract: Abstract-A new concept for phased arrays is proposed using a voltage-controlled ferroelectric lens. The ferroelectric lens concept uniquely incorporates bulk phase shifting-the array does not contain individual phase shifters-using ferroelectric material. This will reduce the number of phase shifters from (n2m) to (n+m), where n is the number of columns and m is the number of rows in a phased array. The number of phase shifter drivers and phase shifter controls is also significantly reduced by using row-colum… Show more

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Cited by 12 publications
(13 citation statements)
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“…Recently ABO 3 type ferroelectric (Ba,Sr)TiO 3 (BST) has attracted much attention for use in tunable devices such as microwave tunable phase shifters, filters, oscillators, and antennas due to their high dielectric constant, relatively low dielectric loss tangent, and large electric field induced tunability (change in dielectric constant) [1][2][3][4][5][6] . Besides, the BST material is also of high interest for devices like field effect transistors (FETs) due to their potential application in microelectronics, and especially for nonvolatile ferroelectric random access memory (NvFeRAM) because of its reasonably ferroelectric properties and the possibility of integration with silicon [7,8] .…”
Section: Introductionmentioning
confidence: 99%
“…Recently ABO 3 type ferroelectric (Ba,Sr)TiO 3 (BST) has attracted much attention for use in tunable devices such as microwave tunable phase shifters, filters, oscillators, and antennas due to their high dielectric constant, relatively low dielectric loss tangent, and large electric field induced tunability (change in dielectric constant) [1][2][3][4][5][6] . Besides, the BST material is also of high interest for devices like field effect transistors (FETs) due to their potential application in microelectronics, and especially for nonvolatile ferroelectric random access memory (NvFeRAM) because of its reasonably ferroelectric properties and the possibility of integration with silicon [7,8] .…”
Section: Introductionmentioning
confidence: 99%
“…The dielectric perturbation changes the propagation constant and phase [7]. The new method will reduce the number of phase shifters from ( ) to ( ) where is the number of columns and is the number of rows in a two-dimensional (2-D) planar phased array [8]. Manuscript Beam steering methods using a ferrite plate have been developed for a low cost system, but it requires very high voltage up to several kV [5], [8], [9].…”
Section: Introductionmentioning
confidence: 99%
“…The new method will reduce the number of phase shifters from ( ) to ( ) where is the number of columns and is the number of rows in a two-dimensional (2-D) planar phased array [8]. Manuscript Beam steering methods using a ferrite plate have been developed for a low cost system, but it requires very high voltage up to several kV [5], [8], [9]. The ferrite plate phase shifter of [8] requires impedance matching transformers, a polarization rotator for 2-D array, large size lens, power consumption of 0.5 W, forced air cooling, etc.…”
Section: Introductionmentioning
confidence: 99%
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“…In order to achieve low profile and reduce the cost of a phase-shifter in the phased array, new techniques need to be developed for analogue phaseshifters in phased arrays. Recently, several new phaseshifting techniques have been demonstrated, which attempt to address the above issues [1,2]. The techniques discussed in [1] rely on piezoelectrically-actuated mechanical systems to achieve phase-shifting.…”
Section: Introductionmentioning
confidence: 99%