Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides

Wu, Ernest Y.; Aitken, J.; Nowak, E.; Vayshenker, A.; Varekamp, P.; Hueckel, G.; McKenna, J.; Harmon, D.; Han, Liang; Montrose, C. J.; Dufresne, Roger

doi:10.1109/iedm.2000.904375

Cited by 70 publications

(32 citation statements)

References 5 publications

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“…21) with c $ 7.5 for 5 nm thick films but asymptoting to lower values for thicker films. 22 This similarity suggests that the mechanism causing a change in the resistive state in an oxide-based RRAM is likely to arise from a breakdown mechanism ameliorated by the limiting resistance of the polymer layer, i.e., a form of soft breakdown. The results in Fig.…”

Section: B Transient Response In the On-statementioning

confidence: 99%

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

Rocha

Leeuw

Meskers

et al. 2013

Journal of Applied Physics

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Articles you may be interested in Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon J. Appl. Phys. 118, 205503 (2015); 10.1063/1.4936349Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism Appl. Phys. Lett. 105, 193502 (2014) The dynamic response of a non-volatile, bistable resistive memory fabricated in the form of Al 2 O 3 /polymer diodes has been probed in both the off-and on-state using triangular and step voltage profiles. The results provide insight into the wide spread in switching times reported in the literature and explain an apparently anomalous behaviour of the on-state, namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a "dead time" phenomenon. The off-state response follows closely the predictions based on a classical, two-layer capacitor description of the device. As voltage scan rates increase, the model predicts that the fraction of the applied voltage, V ox , appearing across the oxide decreases. Device responses to step voltages in both the off-and on-state show that switching events are characterized by a delay time. Coupling such delays to the lower values of V ox attained during fast scan rates, the anomalous observation in the on-state that, device currents decrease with increasing voltage scan rate, is readily explained. Assuming that a critical current is required to turn off a conducting channel in the oxide, a tentative model is suggested to explain the shift in the onset of negative differential resistance to lower voltages as the voltage scan rate increases. The findings also suggest that the fundamental limitations on the speed of operation of a bilayer resistive memory are the time-and voltage-dependences of the switch-on mechanism and not the switch-off process. V C 2013 American Institute of Physics. [http://dx

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Section: B Transient Response In the On-statementioning

confidence: 99%

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

Rocha

Leeuw

Meskers

et al. 2013

Journal of Applied Physics

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“…The thinner oxides (1.4-1.6 nm) appear to exhibit a larger voltage acceleration. It was later realized that the voltage acceleration parameter was a function of voltage not oxide thickness [40], [75]. Thinner oxides are tested at lower voltages than thicker oxides.…”

Section: B Voltage and Temperature Accelerationmentioning

confidence: 99%

“…The larger voltage acceleration at lower voltages was explained as an increased energy-to-breakdown since dissipated energy required for the production of oxide defects decreases dramatically at low voltages [75]. The larger voltage acceleration parameter may also be a consequence of a larger or a smaller defect generation rate at lower voltages [67].…”

Section: B Voltage and Temperature Accelerationmentioning

confidence: 99%

“…The larger voltage acceleration parameter may also be a consequence of a larger or a smaller defect generation rate at lower voltages [67]. To account for the voltage dependent voltage acceleration parameter, Wu et al demonstrated that had the functional form of where n was independent of thickness [75]. It was the increased voltage acceleration parameter and the fact that the Weibull was experimentally observed to be larger than 1 (see Fig.…”

Section: B Voltage and Temperature Accelerationmentioning

confidence: 99%

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Ultrathin gate oxide reliability: physical models, statistics, and characterization

Suehle

2002

IEEE Trans. Electron Devices

145

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Abstract-The present understanding of wear-out and breakdown in ultrathin ( 5 0 nm) SiO 2 gate dielectric films and issues relating to reliability projection are reviewed in this article. Recent evidence supporting a voltage-driven model for defect generation and breakdown, where energetic tunneling electrons induce defect generation and breakdown will be discussed. The concept of a critical number of defects required to cause breakdown and percolation theory will be used to describe the observed statistical failure distributions for ultrathin gate dielectric breakdown. Recent observations of a voltage dependent voltage acceleration parameter and non-Arrhenius temperature dependence will be presented. The current understanding of soft breakdown will be discussed and proposed techniques for detecting breakdown presented. Finally, the implications of soft breakdown on circuit functionality and the applicability of applying current reliability characterization and analysis techniques to project the reliability of future alternative gate dielectrics will be discussed.

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“…7 for n-and p-MOSFETs, respectively. For a thicker oxide tox=130 Å and same area, it is observed that the oxide lifetime and β values increase compared to the thinner oxide [34]- [35], as depicted in Fig. 9.…”

Section: Statistical Gate Oxide Evaluation Under Vftlp and Discussionmentioning

confidence: 99%

Gate oxide evaluation under very fast transmission line pulse (VFTLP) CDM-type stress

Malobabic

Ellis

Salcedo

et al. 2008

2008 7th International Caribbean Conference on Devices, Circuits and Systems

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Abstract-Gate oxide breakdown is analyzed under very fast transmission line pulsed (VFTLP) stress, using different pulserise times and -widths. The switching of oxide behavior pre-and post-breakdown occurs in tenths of a nanosecond and it shows reproducible voltage and current characteristics. The total stress and time-dependent-dielectric-breakdown (TDDB) during pulsed stress-method are evaluated using the following two procedures: 1) by adding up the total pulsed stress time, and 2) by extrapolation of the pulsed stress time to a constant voltage stress (CVS)-type measurements. It is shown that the latter method allows for a better comparison of identical oxides TDDB under various stress conditions. A methodology to characterize gate oxide breakdown using a single pulse is finally discussed. This is important to assess the gate-oxide failure condition during a charged device model (CDM)-type electrostatic discharge (ESD).

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Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides

Cited by 70 publications

References 5 publications

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Gate oxide evaluation under very fast transmission line pulse (VFTLP) CDM-type stress

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