Warpage and stress relaxation of the transferred GaN LED epi-layer on electroplated Cu substrates

Lin, Yow−Jon; Liu, Y. S.; Chang, Che-Ming; Liu, C. Y.

doi:10.1007/s13391-013-0029-x

Cited by 8 publications

(12 citation statements)

References 15 publications

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“…As shown in Figure 5d, Cu (111), Cu (200), and Cu (220) peaks are observed for Cu on a 3J solar cell. The XRD patterns show that the Cu film with a 5 ASD current density has (111) preferred orientation, which is the same conclusion as in studies of Lin et al [ 28 ] Figure 5e shows the XRD spectra of the (111) peaks of Cu films at different times after plating. As the placement time increases, the intensity of the XRD peaks increases, and the full width at half the maximum value is reduced.…”

Section: Resultssupporting

confidence: 85%

“…The stress level of the electrochemical deposition (ECD) Cu film is related to curvature by Stony's equation. [ 27,28 ]

σ_{film} = \frac{E_{normals} t_{normals}^{2}}{6 false(1 - V_{normals} false) t_{normalf}} (\frac{1}{R_{normalf}} - \frac{1}{R_{normals}})

where E s , V s , t s , R s are Young's modulus, Poisson's ratio, thickness, radius of curvature of unplanted PV panels, and t f and R f are the Cu film thickness and radius of curvature, respectively. The calculated internal stress of 3J solar cells is shown in Figure 3b.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Stress Analysis of Flexible GaInP/GaAs/InGaAs Solar Cells Based on Cu Thin‐Film Substrates

Chen

Long

Sun

et al. 2022

Adv Energy and Sustain Res

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The stress of GaInP/GaAs/InGaAs triple‐junction (3J) solar cells with different thicknesses of Cu thin‐film substrates is analyzed. X‐ray diffractometer and metallographic examination show that the unstable as‐deposited Cu film undergoes room‐temperature self‐annealing, which results in grain growth and changes the internal stress of the Cu film over time. A suitable Cu thickness (18 μm) for 3J solar cells is obtained, whose internal stress can offset the stress caused by the epitaxial mismatch. The flexible 3J solar cell with 18 μm Cu film has the lowest curvature of 8.24 m−1 under the combined effect of thermal stress and lattice mismatch stress. The photovoltaic conversion efficiency reaches 35.02% with the open‐circuit voltage of 3.03 V under AM1.5G spectrum. Cu films with a thickness of 14–28 μm have little effect on the optoelectronic properties of the final device. Reducing the curvature of lattice‐mismatched GaInP/GaAs/InGaAs solar cell devices is beneficial for realizing large‐scale flexible solar cell modules.

show abstract

Section: Resultssupporting

confidence: 85%

“…The stress level of the electrochemical deposition (ECD) Cu film is related to curvature by Stony's equation. [ 27,28 ]

σ_{film} = \frac{E_{normals} t_{normals}^{2}}{6 false(1 - V_{normals} false) t_{normalf}} (\frac{1}{R_{normalf}} - \frac{1}{R_{normals}})

Section: Resultsmentioning

confidence: 99%

Stress Analysis of Flexible GaInP/GaAs/InGaAs Solar Cells Based on Cu Thin‐Film Substrates

Chen

Long

Sun

et al. 2022

Adv Energy and Sustain Res

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“…E 2 -high peak position implies that the GaN epilayer is under compressive stress. The relationship between the shift of the E 2 -high peak position, ω (cm −1 ), and the stress change, σ Ga N (GPa), of the GaN epilayers according to [11] is given by…”

Section: A Stress Evolution In the Gan Epilayers Before And After Die-attachmentmentioning

confidence: 99%

Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

Lin

Liu

Chang

et al. 2014

IEEE Photon. Technol. Lett.

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By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm 2 . The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.

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“…GaN NPs have been synthesized using different methods [12][13][14][15][16][17][18][19][20][21], which include pyrolysis at high temperature, formation of colloidal GaN quantum dot technique, chemical and combustion methods [22][23][24][25][26][27]. However, most of these methods require high temperature and expensive chemicals for preparation.…”

Section: Introductionmentioning

confidence: 99%

New issue of GaN nanoparticles solar cell

Qaeed

Ibrahim

Saron

et al. 2015

Current Applied Physics

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Warpage and stress relaxation of the transferred GaN LED epi-layer on electroplated Cu substrates

Cited by 8 publications

References 15 publications

Stress Analysis of Flexible GaInP/GaAs/InGaAs Solar Cells Based on Cu Thin‐Film Substrates

Stress Analysis of Flexible GaInP/GaAs/InGaAs Solar Cells Based on Cu Thin‐Film Substrates

Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

New issue of GaN nanoparticles solar cell

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