Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers

Abstract

. (2005). Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers. Electronics Letters, 41(1), 41-43. DOI: 10.1049/el:20056995 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.

Modeling of low coherence interferometry using broadband multi-Gaussian light sources

“…The broadening is controlled by a change in the matrix surrounding the QD; that is, when the QDs are covered by an InGaAs strain-reducing layer. Depending on the thickness and composition of the strain-reducing layer, an emission red shift occurs [21]. The combination of the ground state and excited state emissions results in a bandwidth of 121 nm, centered at 1290 nm (L C = 6.1 μm).…”

Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters

“…The other promising approach for chirping the emission energies of the Qdot/Qdash stacking layers in the multi-stack device structure is accomplished in various manners. For instance, varying the capping layer thickness or the spacer /barrier layer thickness [7], [12], [13], changing the amount of InAs deposition or conditions or both [14], [15], the position of the dot layer in the dot-in-well structure [16], hybrid Qdotquantum well (Qwell) [17]. In general, enhanced broad emission from both, SLDs (∼>100 nm) and lasers (∼ 75 nm) have been reported, in addition to high performance characteristics observed in the latter case.…”

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

“…To the best of our knowledge, this is the first demonstration of III-V InAs QD SLD on Si substrates and is a result of optimizing DFLs and careful control of dots size inhomogeneity. Further improvements in linewidth can be expected through using chirped QDs [31], QDs intermixing [32], and hybrid QW/QD structure [33,34].…”