Wideband LNA with 1.9 dB noise figure in 0.18 µm CMOS for high frequency ultrasound imaging applications

This paper presents a wideband low-noise amplifier (LNA) front-end with noise and distortion cancellation for high-frequency ultrasound transducers. The LNA employs a resistive shunt-feedback structure with a feedforward noise-canceling technique to accomplish both wideband impedance matching and low noise performance. A complementary CMOS topology was also developed to cancel out the second-order harmonic distortion and enhance the amplifier linearity. A high-frequency ultrasound (HFUS) and photoacoustic (PA) imaging front-end, including the proposed LNA and a variable gain amplifier (VGA), was designed and fabricated in a 180 nm CMOS process. At 80 MHz, the front-end achieves an input-referred noise density of 1.36 nV/sqrt (Hz), an input return loss (S11) of better than −16 dB, a voltage gain of 37 dB, and a total harmonic distortion (THD) of −55 dBc while dissipating a power of 37 mW, leading to a noise efficiency factor (NEF) of 2.66.

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Wideband LNA with 1.9 dB noise figure in 0.18 µm CMOS for high frequency ultrasound imaging applications

Cited by 2 publications

References 9 publications

A Current Reuse Wideband LNA with Complementary Noise and Distortion Cancellation for Ultrasound Imaging Applications

A Current Reuse Wideband LNA with Complementary Noise and Distortion Cancellation for Ultrasound Imaging Applications

A Wideband Noise and Harmonic Distortion Canceling Low-Noise Amplifier for High-Frequency Ultrasound Transducers

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