Work function controlled metal gate electrode on ultrathin gate insulators

Nakajima, K.; Akasaka, Y.; Kaneko, Motozo; Tamaoki, Masato; Yamada, Y.; Shimizu, Takashi; Ozawa, Yoshio; Suguro, K.

doi:10.1109/vlsit.1999.799357

Cited by 29 publications

(29 citation statements)

References 2 publications

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“…The trap density for UTB p-MOSFETs without the nitrogen implant has been found to be 1 10 eV cm , which is about one order of magnitude higher than that of conventional poly-Si p-MOS bulk device [11]. It is likely that the traps are mainly caused by sputtering damage during Mo film deposition and can be reduced by using the CVD method [12]. For the nitrogen-implanted devices, the oxide trap density increases exponentially with the nitrogen dose, to 2.3 10 and 7.8 10 eV cm for N dose of 2 10 and 4 10 cm , respectively.…”

Section: Resultsmentioning

confidence: 99%

Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate

Lee

Choi

et al. 2003

IEEE Electron Device Lett.

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Section: Resultsmentioning

confidence: 99%

Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate

Lee

Choi

et al. 2003

IEEE Electron Device Lett.

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“…Furthermore, the W/TiN metal gate has been wildly applied in complementary metal-oxide-semiconductor (CMOS) devices when scaling into a 100 nm regime by virtue of its effective work function (EWF), low resistivity and fine diffusion barrier [16][17][18]. Variations on TiN properties have been reported for different deposition processes [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…Variations on TiN properties have been reported for different deposition processes [16][17][18][19]. Some investigators proposed to modulate the composition of TiN to get different electrical characteristic, i.e., nitrogen-rich TiN exhibits more positive V FB shift with relatively thicker equivalent oxide thickness (EOT).…”

Section: Introductionmentioning

confidence: 99%

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TiCl4 Barrier Process Engineering in Semiconductor Manufacturing

et al. 2016

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Titanium nitride (TiN) not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti) and TiN processes, which are commonly used as diffusion barriers in via/contact applications. However, engineers frequently struggle at the via/contact module in the beginning of every technology node. As devices shrink, barrier processes become more challenging to overcome the both the physical fill-in and electrical performance requirements of advanced small via/contact plugs. The aim of this paper is to investigate various chemical vapor deposition (CVD) TiCl 4 -based barrier processes to serve the application of advanced small via/contact plugs and the metal gate processes. The results demonstrate that the plasma-enhanced chemical vapor deposition (PECVD) TiCl 4 -based Ti process needs to select a feasible process temperature to avoid Si surface corrosion by high-temperature chloride flow. Conventional high step coverage (HSC) CVD TiCl 4 -based TiN processes give much better impurity performance than metal organic chemical vapor deposition (MOCVD) TiN. However, the higher chloride content in HSC film may degrade the long-term reliability of the device. Furthermore, it is evidenced that a sequential flow deposition (SFD) CVD TiCl 4 -based process with multiple cycles can give much less chloride content, resulting in faster erase speeds and lower erase levels than that of conventional HSC TiN.

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“…The metal gate electrode is necessary not only to eliminate the gate depletion and boron penetration of poly-Si gate, but also to reduce resistance in narrow gate line [1]. For the application of cell transistor in DRAM, the metal gate is also important to reduce channel doping concentration because increasing channel doping to control the Vt of a cell transistor degrades the data retention characteristics of DRAM.…”

Section: Introductionmentioning

confidence: 99%

Study on the Vt variation and bias temperature instability characteristics of TiN/W and TiN metal buried-gate transistor in DRAM application

Jang

Kim

Yoo

et al. 2014

2014 IEEE International Reliability Physics Symposium

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The Vt variation and positive bias temperature instability (PBTI) of TiN/W and TiN metal buried-gate (BG) cell transistors in DRAM are characterized. The use of TiN gate shows a larger Vt variation and different PBTI behavior as compared with TiN/W gate and these are attributed to the formation of chlorine (Cl)-related trap sites during the etch-back process of metal gate. This indicates that Cl in the chemical vapor deposition (CVD) TiN gate is responsible for the phenomena. Keywords-positive bias temperature instability (PBTI), metal gate, TiN/W, TiN, buried-gate (BG), DRAM

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Work function controlled metal gate electrode on ultrathin gate insulators

Cited by 29 publications

References 2 publications

Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate

Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate

TiCl4 Barrier Process Engineering in Semiconductor Manufacturing

Study on the Vt variation and bias temperature instability characteristics of TiN/W and TiN metal buried-gate transistor in DRAM application

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