X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain

“…2 This issue is prohibitive to develop both types of applications: efficient electrically pumped lasers on silicon and high efficiency multijunction solar cells. Recently, the epitaxial growth on Si substrate of the quasi lattice-matched GaP and perfectly lattice-matched GaPN 0.02 layers has been greatly improved [3][4][5] allowing for GaPN-based active areas to efficiently emit light. 6 Among them, quaternary Ga(NAsP) quantum wells (QWs) have shown to be reliable in both electrically pumped laser on GaP (Ref.…”

Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

“…It should be noted that 2p factor is removed to obtain a direct correlation between the distances in reciprocal and in direct space. 4 In addition, x B is the x angle corresponding the Bragg reflection and k the x-ray wavelength. Transverse scan line profiles can possess twocomponent lineshapes in which the narrow component is the Bragg peak of the sample (originating from long-range structural correlations).…”

“…12 Thus, the QF of the APD sensitive (002) and (006) reflections is significantly lower than the QF of the APD insensitive (004) reflection when antiphase disorder exists in GaP layers. 4 A WHL plot 8,13 was drawn to examine the origin of the diffuse scattering. The WHL plot utilizes the information carried by the broad component and differentiates the effects of laterally correlating crystalline defects and crystal mosaicity on the line shape.…”

“…The formation of APDs should be hindered on silicon (001) substrates with surface miscut over 4 along the [110] direction. 4,7 This is due to the biatomic steps which are formed spontaneously on these surfaces. However, it should be mentioned that there always exist atomic steps with monoatomical height on misoriented substrates although the formation of biatomic steps is favored.…”

“…This approach is much more simple and requires no sensitive annealing process. [4][5][6][7] However, solving APD problems is not sufficient for fabrication of a high-quality layer. Other issues may also degrade the crystal quality.…”