1989
DOI: 10.1149/1.2096659
|View full text |Cite
|
Sign up to set email alerts
|

XPS and SIMS Study of Anhydrous  HF  and UV/Ozone‐Modified Silicon (100) Surfaces

Abstract: X-ray photoelectron spectroscopy and secondary ion mass spectrometry are used to study the surface chemistry of silicon single-crystal wafers. Anhydrous HF and UV/ozone processes modify the surface chemistry by altering the concentration and bonding environments of the most abundant surface atoms: Si, O, C, H, and F. Anhydrous HF in conjunction with water vapor [HF(g)] removes the silicon native oxide. Native oxides with initial thicknesses of 1 lfi~, four monolayers, are exposed to a HF(g)-H~O rinse, HF~g), a… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
25
0

Year Published

1991
1991
2013
2013

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 79 publications
(26 citation statements)
references
References 32 publications
1
25
0
Order By: Relevance
“…Before bonding the native oxide is removed from the surfaces to have a crystal-to-crystal bonding. HF acid completely removes both Si and InP native oxides [45,46], as was seen also from XPS spectra in this work [47]. However, the hydrophobic bonding (HB) is very weak at room temperature and after low-temperature annealing, because of the hydrogen-terminated surface.…”
Section: Hydrophobic Bonding Using Wet Chemistrysupporting
confidence: 75%
“…Before bonding the native oxide is removed from the surfaces to have a crystal-to-crystal bonding. HF acid completely removes both Si and InP native oxides [45,46], as was seen also from XPS spectra in this work [47]. However, the hydrophobic bonding (HB) is very weak at room temperature and after low-temperature annealing, because of the hydrogen-terminated surface.…”
Section: Hydrophobic Bonding Using Wet Chemistrysupporting
confidence: 75%
“…Figure 4 shows that some or all of the shifted O 1s peaks at 531.6, 532.6, and 533.4 eV can be identified, depending on the annealing temperature. These peaks are associated with TiO x , 40,41 SiO x F y , [37][38][39] and SiO 2 , 20,37,42,43 respectively. Except for TiO x , their intensity increased with temperature up to 600°C, beyond which they decreased with temperature until they became undetectable again at 700°C.…”
Section: Methodsmentioning
confidence: 97%
“…[38][39][40][41] The SiO x -related peaks posses in the energy range between 102 and 104 eV. 39,40,[42][43][44][45] We can never find such an oxide-related peak in the as-prepared spectrum ͓Fig. 7͑b͔͒; however, the large broadening of the Si 2p peak is evident.…”
Section: Xps Measurementmentioning
confidence: 96%