XPS investigation of thin SiOx and SiOxNy overlayers

Abstract

Angle-resolved XPS is used to determine the thickness and the uniformity of the chemical composition with respect to oxygen and nitrogen of the very thin silicon oxide and oxynitride overlayers grown on silicon. ᭧

Effect of low temperature oxidation on dielectric properties of mercury sensitized photo-deposited silicon nitride films

“…The other three peaks (A, B and C) centered around 101.4 eV, 102.7 eV and 103.6 eV are attributed to Si 3 N 4 , SiN x O y and SiO 2 respectively. The binding energy of the peaks assigned to Si 3 N 4 , SiN x O y and SiO 2 matches quite well with the studies reported earlier [16][17][18][19][20]. The presence of both SiN x O y and SiO 2 peaks in Si 2p spectra clearly shows the incorporation of oxygen in all samples.…”

Band-Bending at Buried SiO2/Si Interface as Probed by XPS

“…It is well established that the oxide side of the interface is positively charged as the result of electron injection to the silicon side for any type of silicon, as schematically shown in Figure . ,− Hence, as was already advocated in our previous publication, the overall band-bending is additive (p-type + oxide), resulting in a larger shift (∼0.5 eV) upon illumination . The absence of significant photoshift for the n-sample, can also be attributed to compensation of the surface upward bending of the n-Si by the oxide downward bending at the interface, as schematically shown in Figure b.…”

“…Upon introduction to the spectrometer, electrons flow from the n-type and holes from the p-type Si wafers so that they are charged differently, due to doping. However, the charges on the surfaces are screened by band bending and by accumulation of opposite-sign charges near the surface. − When light of energy greater than the band gap of Si is incident on the sample charge carriers return the bands to the flat-band condition. − This data was collected with neutralizer off. We also modulated (not shown here) the electrical potential of the surface using an external power supply generated square waves of ±10 V amplituted and at frequencies from 0.5 to 500 Hz, with no observable effect on the shifts due to the incident light.…”

“…For estimation of the thicknesses of the oxide or other layers, the well-established procedures, based on the intensity of the corresponding peaks corrected for their attenuation lengths, are used or adopted. , We estimate the accuracy in thickness determination to be ±1 nm.…”

Plasma Surface Functionalization of AFP Manufactured Composites for Improved Adhesive Bond Performance

“…SiC XPS peak was not found for sample 4 after treatment. Instead, SiO2 was detected at binding energies 103.3±0.2 eV and 105 eV showed all silicon oxidized[118,119].…”