“Y function” method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction

Diouf, C.; Cros, A.; Monfray, S.; Mitard, J.; Rosa, J.; Gloria, D.; Ghibaudo, G.

doi:10.1016/j.sse.2013.03.007

Cited by 22 publications

(17 citation statements)

References 7 publications

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“…For two-probe configuration measurements, an alternative approach to estimate the contact resistance is the so-called Y-function method (YFM). The method includes the contact resistance in the expression of the transistor current I ds as a function of V ds and V gs (the gate-to-source voltage) [79,83]:…”

Section: Methodsmentioning

confidence: 99%

Contact resistance and mobility in back-gate graphene transistors

et al. 2020

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The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. High contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate back-gate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of carrier mobility dependence on the gate-voltage. We find that the gate voltage modulates both the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that raising the temperature lowers the carrier mobility, has a negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally, we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance as low as 700 Ω·μm can be achieved by the zig-zag shaping of the Ni contact.

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Section: Methodsmentioning

confidence: 99%

Contact resistance and mobility in back-gate graphene transistors

et al. 2020

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“…Another method consists in using the Y function, Y = I d / √ g m , extended to the high V d region. The saturation velocity could then be obtained from the plot of low charge apparent mobility versus V d [27]. HF C gc measurements have also been used to calculate the inversion charge as a function of V d and, in turn, to directly evaluate the carrier velocity from I dsat /W · Q inv [5], [7].…”

Section: Comparative Analysis Of Carrier Velocitymentioning

confidence: 99%

Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

Shin

Shi

Mouis

et al. 2015

IEEE Trans. Electron Devices

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The feasibility of geometric magnetoresistance (MR) measurement from linear to saturation operation regime is demonstrated in ultrathin body and BOX fully depleted siliconon-insulator devices from 14-nm technology node. Besides, we propose a new physical compact model for MOSFET drain current under high field transport, which reproduces experimental MR mobility from linear to saturation operation region and serves as the basis for a new extraction method of carrier saturation velocity. A benchmarking with state-of-the-art saturation velocity extraction methodologies is also conducted. Our saturation velocity results indicate that, for this technology, nonstationary transport prevails as manifested by an overshoot velocity behavior, still far from the ballistic limit.Index Terms-Magnetoresistance (MR), mobility, out-ofequilibrium transport, saturation regime, saturation velocity, ultrathin body and BOX (UTBB).

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“…Dividing the drain current by the square root of the transconductance in (25) serves the purpose of canceling those effects [69,70]. Once the degradation effects are canceled out, the resulting ''Y'' function is supposed to become a straight line for V G ) V T , which can be then extrapolated to intersect the V G axis at V G = V T [71].…”

Section: The ''Y'' Functionmentioning

confidence: 99%