Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTe

Tanaka, A.; Masa, Y.; Seto, Shûichi; Kawasaki, Takashi

doi:10.1016/0022-0248(89)90615-5

Cited by 78 publications

(29 citation statements)

References 8 publications

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“…In a subsequent review, Capper [23] reports a(x ) = 6.4614 + 0.0084x + 0.0168x 2 − 0.0057x 3 Å (8.16) as the expression for the variation of lattice parameter, a, with the composition, x , which was proposed by Higgins et al [3]; and points out that the differences with Brice's near-stoichiometric case and that of Woolley and Ray [24] amount to ±0.001Å or less. Additional data for bulk material [5,[25][26][27], as well as for molecular beam epitaxy (MBE) [28,29,33], liquid phase epitaxy (LPE) [30][31][32]35], and metal-organic vapor phase epitaxy (MOVPE) [36] material are also shown in Figure 8.3, which are in general agreement with each other and with Equation 8.16. In contrast, earlier MOVPE growth of HgTe layers on CdTe by Bhat et al [38] resulted in lattice parameters of 6.454-6.456Å at 1.0-3.5 μm film thickness.…”

Section: Variation Of Lattice Parameter With Xsupporting

confidence: 73%

“…By considering literature reports prior to 1987, Brice [22] Brice [22] Higgins et al [3] (Eqn. (8.16)) Wolleey and Ray [24] Bell and Sen [5] Song et al [25] Tanaka et al [26] Johnson et al [27] Di Marzio [28] (MBE) Jacobs et al [29] The inset magnifies the region indicated by the dotted boundary composition x and concluded that Vegard's law is approximately followed. In this correlation, samples are grouped according to their stoichiometry.…”

Section: Variation Of Lattice Parameter With Xmentioning

confidence: 99%

See 1 more Smart Citation

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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Section: Variation Of Lattice Parameter With Xsupporting

confidence: 73%

Section: Variation Of Lattice Parameter With Xmentioning

confidence: 99%

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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“…4) and high crystal perfection [19]. Under Cd/Zn partial pressure control, the axial Zn concentration was found to be uniform within ± 3% (Fig.…”

Section: Zn Concentration Uniformitymentioning

confidence: 93%

Fundamentals of the CdTe and CdZnTe bulk growth

Triboulet

2005

phys. stat. sol. (c)

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The CdTe and CdZnTe growth are reviewed. After presenting briefly the most recent results concerning the phase equilibria in the Cd-Te system, the impact of the characteristics of the Cd-Te chemical bond on the CdTe crystal growth are discussed. The behaviour of Zn alloying in CdTe is then presented at macroscopic and microscopic scale. Furthermore, the strains introduced by the Zn segregation in the alloys are estimated and shown close to the CZT CRSS. Some improvements in the CZT growth are finally presented and discussed: the adjustment of the CZT stoichiometry, the Zn concentration uniformity issue and the strain issue in the alloys which can be overcome by microgravity growth, self-seeding from a free liquid surface, solid state recrystallization and/or dewetting.1I ntroduction CdTe has attracted great interest and found several industrial applications since now forty years. It shows unique properties making it important and very suitable for several applications like photovoltaic conversion, nuclear detection, application for which it has a tremendous potential, mainly for medical purposes, high performance electro-optic modulators and photorefractive devices. It presents both types of conductivity making diode technology and field effect transistors possible. CdTe-based semimagnetics, like CdMnTe, display extremely exciting properties which have not been so far completely exploited. Furthermore, CdZnTe is used as a substrate for the epitaxial deposition of HgCdTe layers.In view of all these applications, considerable efforts have been dedicated since more than forty years to the crystal growth of CdTe which will be reviewed in close relationship with its intrinsic properties, mainly those that come directly from the characteristics of the Cd-Te chemical bond.2P hase equilibria in the Cd-Te system Crystal growth of CdTe requires precise knowledge of the existence regions of the solid, liquid and gas phases with respect to temperature, pressure and composition. For this purpose, the temperature versus composition, T-x , component pressure or total pressure versus temperature, p-T or P-T, and finally p-T-x or P-T-x diagrams have been experimentally determined and theoretically modeled. In order to control the stoichiometry of the crystals, the deviations from which affect strongly their semiconducting properties, the knowledge of the extent of the homogeneity domain and of the position of the stoichiometric line inside the three phase boundary is essential as well.After many experimental investigations and theoretical studies [1], the Cd-Te phase diagram has been revisited from total vapor pressure scanning experiments by J.H. Greenberg [2]. The determination of the *

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“…Secondly, its thermal conductivity is so low that substantial concavity is almost always present in the entire crystal growth process. Finally and most important is that the solute zinc segregation coefficient is rather high, about 1.35 [1][2][3].…”

Section: Introductionmentioning

confidence: 98%

Optimization of control parameters of cadmium zinc telluride Bridgman single crystal growth

Liu

Song

Zhang

et al. 2007

Cryst. Res. Technol.

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The temperature gradient within a furnace chamber and the crucible pull rate are the key control parameters for cadmium zinc telluride Bridgman single crystal growth. Their effects on the heat and mass transfer in front of the solid-liquid interface and the solute segregation in the grown crystal were investigated with numerical modeling. With an increase of the temperature gradient, the convection intensity in the melt in front of the solid-liquid interface increases almost proportionally to the temperature gradient. The interface concavity decreases rapidly at faster crucible pull rates, while it increases at slow pull rates. Moreover, the solute concentration gradient in the melt in front of the solid-liquid interface decreases significantly, as does the radial solute segregation in the grown crystal. In general, a decrease of the pull rate leads to a strong decrease of the concavity of the solid-liquid interface and of the radial solute segregation in the grown crystal, while the axial solute segregation in the grown crystal increases slightly. A combination of a low crucible pull rate with a medium temperature gradient within the furnace chamber will make the radial solute segregation of the grown crystal vanish.

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Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTe

Cited by 78 publications

References 8 publications

Mechanical and Thermal Properties

Mechanical and Thermal Properties

Fundamentals of the CdTe and CdZnTe bulk growth

Optimization of control parameters of cadmium zinc telluride Bridgman single crystal growth

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