The two methods of the formation of the silicon-on-insulator (SOI) local structures have been proposed. The first one is based on the stimulated lateral epitaxial growth and planarization of Si monocrystal film. The second one is based on local thermal oxidation of Si buried layer through horizontal tunnels. The obtained SOIstructures are used in a base matrix crystal fabrication technology for the construction of micro-systems. It is proposed to add to elements of a base crystal of a matrix of cells of field emission micro-cathodes with control circuits. The fabrication technology and the layout of a field emission micro-cathode cell with control high-voltage SOI MOS-transistor has been developed. The computer simulation of high-voltage SOI MOS-transistor static characteristics has been performed.

The paper is devoted to study of the charge carrier transfer characteristics in the silicon microcrystals doped by boron to concentrations corresponding to the metal-dielectric transition, as well as modified by a transition metal admixture with an unfilled 3d+ shell of the local magnetic moment. The magnetoresistance of microcrystals under the magnetic field action to 14 T at the cryogenic temperatures was studied. A detailed analysis of the results of studies of magneto-transport properties of crystals was carried out. It was found that the low-temperature transport of charge carriers for silicon microcrystals is based on hopping polarization conduction. Based on the results of the magnetization study of Si <B, Ni> crystals, the concentration of magnetic centers was determined, which is 4×1017cm-3. The use of silicon microcrystals in magnetic field sensors with the magnetoresistive principle of operation is proposed

Purpose. Texturing of the silicon surface, both by chemical and electrochemical etching, is an integral part of the technology of modern high-performance silicon solar cells. The texture on the front surface of the solar cells not only reduces reflection losses, but also helps to capture long-wave light in the SC structure, thereby expanding its operating spectral range and increasing the short-circuit current. In this regard, the study of the PSi layer in a nanotexture by mass-spectroscopy on the functional properties of the frontal silicon surface, which was pre-textured, is of particular interest. Methodology. The study of all stages of formation of hydrogenated porous structure and identification of technological patterns that affect the characteristics of the obtained nano-, meso-, macropores are very important, because most of the porous parameters are laid at the stage of formation of nucleation (seed) centers. In order to improve the passivating properties of PSi layers used in solar cells, the process of electrochemical hydrogenation of PSi as on p - type silicon substrates with a resistivity of 0.1 ÷ 10 Ohmsm also on substrates with a formed emitter junction n+- p of conductivity was studied. Various solutions were used as the electrolyte, such as (HF: C2H5OH=1: 1), (HF: C2H5OH=1:2) and so on. The current density and anodizing time varied over a wide range of values, which allowed the formation of PSi layers with different porosity and thickness. A solution of HF: C2H5OH = 1: 1 was used as the electrolyte. The anodizing current and time varied over a wide range of values to obtain PSi layers with different porosity and thickness. To determine the conditions of the process of electrochemical hydrogenation of PSi during its cathodic polarization, potentiostatic current-voltage curves of the system Pt (anode)-electrolyte-porous silicon/ silicon (cathode) for electrolytes with different chemical composition were taken. Finding. Comparison of the surface appearance of Baysix type multicrystalline silicon samples before and after hydrogen hydrogenation in an electrolyte based on hydrofluoric acid ((HF: C2H5OH=10:1), (HF:C2H5OH=10:2) and so on), both in the secondary ion Spectra and in the image of the distribution of elements over the surface (mass spectral ion microscope and Ion microzond mode). Originality. We get a 2D image (size 200x200 microns) of the surface of the current of secondary ions H+ hydrogen and 2D image of the secondary ion current of molecular SiH2+ the surface of a Baysix type multicrystalline substrate passivated with hydrogen by hydrogenation, which is comparable to the optical image of a pure silicon surface that has been hydrogenated. From the form of 2D-ion images, as well as their individual parts, it can be seen that all the difference in the current intensity of the secondary ions is due to the topography of the surface of the samples. Practical value. The prospects of creating efficient solar cells using multifunctional multi-textures of porous silicon are shown. References 24, figures 6.

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