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A quantum well (160Å) transistor laser with a 400μm cavity length that achieves the large 3dB modulation bandwidth of 13.5GHz is described. The fast base recombination (transport determined, τBL<10ps) permits improvement of the carrier-photon damping ratio (>1∕2), resulting in a resonant peak magnitude of unity and consequently a resonance frequency of ∼0GHz (no peak) in the small-signal response. Quantum well band filling and bandwidth saturation are observed on the ground state (λ=1000nm), and increase with operation on the first excited state (λ=980nm).

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We review the state-of-the-art in monolithicintegrated InP-based system-on-chip (SOC) photonic integrated circuits (PICs) and the extension of this capability to a foundry offering. The learnings and best practices embodied in the design and fabrication capability of commercially deployed monolithically integrated coherent optical communication SOC are leveraged to develop an optimized and scalable integration platform for a turnkey foundry process. The design automation and infrastructure required to enable a consistent reproducible InP-based foundry offering is summarized.

We show experimentally and analytically that fast spontaneous recombination lifetime, τB,spon, leads to resonance-free frequency response in semiconductor lasers, and as a consequence higher speed operation. Faster τB,spon is obtained by a reverse-bias collector field pinning and tilting a dynamic (removable) charge population in a thin base (τt∼ps), allowing only “fast” recombination. We show resonance-free optical response on a prototype transistor laser (TL) with τB,spon∼29 ps. Based on the TL, a resonance-free tilted-charge diode laser, is demonstrated with a 10.3 Gb/s “clean open-eye” signal achieved with a −3 dB bandwidth device of only 5.6 GHz.