At the EMLC 2009 in Dresden the data preparation package ePLACE was already presented. This package has been used for quite different applications covering mask write, direct write and special applications. In this paper we will disclose results achieved when using the ePLACE package for processing of layout data of immediate interest. During the evaluation phase of the new solution we could benefit from broad experience we collected over many years with the fracture performance of the MGS software, which is one core element of today's ePLACE package. A key interest of this paper is the investigation of the scalability of computing solutions as a cost-effective approach when processing huge data volumes with the new solution. This is reflected against current state-of-the-art data processing tasks being part of both mask write and direct write applications. Furthermore, we evaluated visualization and simulation possibilities of the ePLACE package with respect to its use with latest layouts in various applications. The improved performance of the data preparation package including its adaptation to new e-beam lithography options, as, for instance, the incorporation of the cell projection capability or the newly developed Multi Shaped Beam (MSB) technology, will be also discussed. As an example the matching of the data path with a Vistec SB3055 will be outlined. Processing of Design For E-Beam (DFEB) data (including cell contents) and their conversion to real exposure data is reported. The advantages of the parallel use of standard shaped beam und cell projection technologies are highlighted focussing on latest writing time yields achieved when applying the CP feature

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Photomask lithography for the 22nm technology node and beyond requires new approaches in equipment as well as mask design. Multi Shaped Beam technology (MSB) for photomask patterning using a matrix of small beamlets instead of just one shaped beam, is a very effective and evolutionary enhancement of the well established Variable Shaped Beam (VSB) technique. Its technical feasibility has been successfully demonstrated [2] . One advantage of MSB is the productivity gain over VSB with decreasing critical dimensions (CDs) and increasing levels of optical proximity correction (OPC) or for inverse lithography technology (ILT) and source mask optimization (SMO) solutions. This makes MSB an attractive alternative to VSB for photomask lithography at future technology nodes.The present paper describes in detail the working principles and advantages of MSB over VSB for photomask applications. MSB integrates the electron optical column, x/y stage and data path into an operational electron beam lithography system. Multi e-beam mask writer specific requirements concerning the computational lithography and their implementation are outlined here. Data preparation of aggressive OPC layouts, shot count reductions over VSB, data path architecture, write time simulation and several aspects of the exposure process sequence are also discussed. Analysis results of both the MSB processing and the write time of full 32nm and 22nm node critical layer mask layouts are presented as an example.

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