Articles you may be interested inA highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network J. Appl. Phys. 97, 033522 (2005); 10.1063/1.1846132 Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H 2 -SiH 4 plasma

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Field emission from silicon tips with carbon coatings deposited by VHF CVD at low temperature, Ts=225°C, has been studied. Emission was measured from both single tips and tip arrays. Structure and electronic properties of the films have been characterized. Significant effects due to pregrowth plasma treatment of the sample surface were observed on microstructure and emission characteristics. Optimized carbon coatings on silicon tips increased emission current by about two orders and reduced the threshold field to 0.1 V/μm.