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Multi-gate CMOS devices promise to usher an era of transistors with good electrostatic integrity at the sub-22nm nodes, which makes it essential to rethink traditional approaches to designing lowleakage digital logic and sequential elements formerly used in highperformance planar single-gate technologies. In the current work, we explore the design space of symmetric (Symm-Φ G ) and asymmetric gate workfunction (Asymm-Φ G ) FinFET logic gates, latches, and flip-flops for optimal trade-offs in leakage vs. delay and temperature in a highperformance FinFET technology. We demonstrate, using mixed-mode Sentaurus technology computer-aided design (TCAD) device simulations, that Asymm-Φ G shorted-gate n/p-FinFETs, which use both workfunctions corresponding to typical high-performance n/p-FinFETs, yield over two orders of magnitude lower leakage without excessive degradation in onstate current, in comparison to Symm-Φ G shorted-gate (SG) FinFETs, placing them in a better position than back-gate biased independentgate (IG) FinFETs for leakage reduction. Results for elementary logic gates like INV, NAND2, NOR2, XOR2, and XNOR2 using Asymm-Φ G SG-mode FinFETs indicate that they are more optimally located in the leakage-delay spectrum in comparison to the most versatile configurations possible by mixing corresponding Symm-Φ G SG-and IG-mode FinFETs. Latches and flip-flops, however, require an astute combination of Symm-Φ G and Asymm-Φ G FinFETs to optimize leakage, delay, and setup time simultaneously.