Flash memories can undergo three di erent types of disturbances, DC-Programming, DC-Erasure, and Drain Disturbance. These faults are s p eci c to ash memories and do not occur in RAMs. In this paper, we discuss these disturbances, their causes, and develop fault models that capture the characteristics of these faults. We present optimal and near optimal algorithms to detect these faults in ash memories.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.