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In this article, the dispersion relation for horizontal wave propagation in silicon interposers consisting of arbitrary numbers of silicon and silicon dioxide layers between metal layers is investigated. Results are obtained by the transverse resonance method (TRM). The method is verified by comparison to results of finite element based full-wave simulations. The results of the TRM show good correspondence with those obtained by full-wave simulations and can be obtained within significantly shorter calculation times. Results for a typical layout of a silicon interposer and examples for thin silicon dioxide layers and a large number of layers are also presented. Further, an approximate solution for the fundamental mode of typical structures is given and examples show the applicability and limitations of the approximate solution

The visible approach of optical Contactless Fault Isolation (VIS-CFI) serves the perspective of application in FinFET technologies of 10 nm nodes and smaller. A solid immersion lens (SIL) is mandatory to obtain a proper resolution. A VISCFI setup with SIL requires a global polishing process for sub-10 µm silicon thickness. This work is the first to combine all these necessary components for high resolution VIS-CFI in one successful experiment. We demonstrate Laser Voltage Imaging and Probing (LVI, LVP) on 16/14 nm technology devices and investigate a focus depth dependence of the LVI/LVP measurement in FinFETs.

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