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This paper investigates the instability of negative bias temperature in the dark and the illumination stresses for the InGaZnO thin film transistors. During the negative bias temperature illumination stress, properties exhibit an obvious negative threshold voltage shift and a significant degradation of subthreshold swing. The photoelectric heat effect that combined the effects of electric field, illumination, and temperature induces the generation of dangling bonds in the interface, resulting in an apparent degradation. It is related to the presence of light energy. Finally, this work also employs the capacitance-voltage measurement and recovery behavior to further clarify the mechanism of degradation behaviors.

This paper investigated the 4k2k of 65-inch TV with oxide TFT performances. The abnormal subthreshold leakage current at high temperature results from active layer bulk, and GI/active layer interface. Finally, it is specific for the V t shift (-1V) of devices with color-materials as a passivation layer under NBIS. INTRODUCTIONIntense research efforts in the subject of oxide semiconductors have dramatically increased the performances of thin film transistors (TFT) as compared with amorphous silicon TFT since the end of past century [1]. Moreover, the oxide-TFT has been studied for applications in novel active-matrix displays (AMDs), such as smart phone, tablet, and large size TV [2]. High electrical performances and stability have been reported for back channel-etch (BCE) structure of oxide-TFT by using the AlOx film as a passivation layer (PV) [3]. However, the threshold voltage (V t ) of devices exhibited large shift behavior under positive/negative bias-temperature (P/NBTS) and positive/negative bias-light (P/NBIS) due to both electron and hole trapping in the active layer, the active layer/GI, and active layer/PV interface [4][5].In this paper, we study the influence of subthreshold leakage current on temperature dependence and GI bilayer of oxide-TFTs, and then the low temperature annealing in O 2 chamber were used to reduce amount of oxygen vacancy in the active layer. Finally, the oxide-TFTs coated with color Resistors (RGB-materials) as passivation layer show high performances of low V t shift under stress, good subthreshold slope, and weak hysteresis behavior. Finally, we demonstrate the high performances 4k2k TV by drive oxide-TFTs.

We succeeded the true 1G1D 75" 8K4k LCD with Oxide thinfilm transistor (TFT) for the first time. The initial prototype TFT process was in Gen.6 FAB, but now, we have been developed mass producible back channel etching (BCE)-type oxide TFT process in Gen.7 FAB. As its first application, 1.7μsec pixel chargeable 1G1D 120Hz 8-domain LCD without any additional compensation part for image quality deterioration such as transmittance loss and color washout is introduced. In practical point of view, this technology can render about 20% reduction of total production material cost compare to a-Si technology.Moreover, simplified 1G1D metal line structure can contribute to production yield improvement. In this report, we present the latest AUOs Oxide TFT backplane development.

This paper investigated the 4k2k of display with ES and BCE-types of oxide TFT performances. It is specific for the V t shift (-1V) of ES and BCE-types of devices with color-materials as a passivation layer under NBITS and then we develop thehigh reliability expanded-electrode structure TFTs are proposed to be suitable for use in GOA technology. Finally, we demonstrate the high resolution of 15.6-inch 4k2k display with new technology.