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The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R d ) is found to be inversely proportional to the amplitude of the programming current, as R d = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.Index Terms-Chalcogenide, electrothermal simulations, nonvolatile memory, phase-change memory (PCM).

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