Oxygen migration is reported as key factors of resistive switching in graphene oxide (GO) based memories by different groups. A flexible nonvolatile resistive switching memory based on GO was fabricated through a spin-coating process. The speed of the SET and RESET operations of the GO memories was found to be significant asymmetric. The RESET speed is in the order of 100 ns under a −5 V voltage while the SET speed is three orders of magnitude slower (100 μs) under a 5 V bias. The behavior of resistive switching speed difference is elucidated by voltage modulated oxygen diffusion barrier change.

Three-dimensional temperature (T)–pressure (P)–composition (X) phase diagrams of binary carbon-hydrogen (C–H) and carbon-oxygen (C–O) systems for activated low pressure diamond growth have been calculated. Based on an approximation of linear combination between C–H and C–O systems, a projective ternary carbonhydrogen-oxygen (C–H–O) phase diagram has also been obtained. There is always a diamond growth region in each of these phase diagrams. Once a supply of external activating energy stops, the diamond growth region will not exist. Nearly all of the reliable experimental data reported in the literature drop into the possible diamond growth region of the calculated projective ternary C–H–O phase diagram under the conditions of 0.01–100 kPa and above 700 K.

No abstract

No abstract