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Advanced rapid thermal processing (RTP) equipment and sensors have been developed for in-situ fabrication of semiconductor devices. High-performance multi-zone lamp modules have been applied to various processes including rapid thermal oxidation (RTO), chemicalvapor deposition (CVD) of tungsten and amorphous/polycrystalline silicon, silicide formation, as well as high-temperature rapid thermal annealing (RTA). Concurrent use of multizone lamps and multi-point temperature sensors allows real-time wafer temperature control and process uniformity optimization. Specific experimental results will be presented on the multi-zone lamp modules, in-situ process control sensors, and single-wafer fabrication processes.

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We have demonstrated the total use of single-wafer processing for fast-cycle-time IC roduction. Rapid thermal processes have been develope: for all the thermal fabrication steps required in two 0.35-pm CMOS technolo 'a. Complete CMOS rocess integration and 3-day CMObIC manufacturing cyc% time have been demonstrated with all-RTP thermal processing. Agile IC ManufacturingState-of-the-art IC factories offer high throughput rates but long manufacturing cycle times. Under the TI Microelectronics Manufacturing Science and Technology (TI-MMST) program, we launched a 5-year project in 1988 to develop a manufacturing technology with the objectives of reducin the factory cost and cycle time. Thi program has result e l i n a flexible low-cost minifactory implemented in a -5000 Jt' clean room for 0.35 pm CMOS fabrication with a recor cycle time of 3 days. 0.35-pm CMOS Process TechnologiesTwo 0.35 pm twin-well double-level metal CMOS technologies were developed with and without self-aligned silicide salicide). The non-salicided technology contains buriedchannel PMOS and surface-channel NMOS transistors and a single n+-doped polysilicon gate (75 A gate oxide). The salicided technology employs n+ and p+ polysilicon gates for the surface-channel NMOS and PMOS devices (60 A gate oxide). Fig. 1 illustrates the process modules . GAfE DESIRE IIE -n WO RTP SL R E M 3 -PO PAlTElW W Et01Figure 1: Fabrication process modules for the salicided 0.35 pm CMOS technology with surface-channel devices.for the dicided technology. The NMOS and PMOS devices employ implant-doped n+ and p+ olysilicon gates and their threshold volt es are adjuste: by the surface concentrations of the p 3 n well regions, respectively. In the non-dicided CMOS proceee flow, the NMOS threshold volta e is again directly set by the pwell concentration. The BMOS threshold voltape is, however, adjusted by a patterned low-ener y boron implant using a spht-deposited gate process (1).process eliminates the effect of gate oxidation thermal budget on the PMOS channel. RTP Equipment TechnologyThe TI-MMST minifactory contains 34 sin le-wafer rocess modules. Vacuum wafer cassettes are u s 3 for mackne for enhanced procesa uniformity. p-epi/p+ substrate I "' i 0.6 I g 0.5 0.41 0.3t 1 I -, I -n I Figure 2: Multi-sone RTP pyrometry wafer temperature measurement with light interference compensation.

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