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This special session adresses the problems that designers face when implementing analog and digital circuits in nanometer technologies. An introductory embedded tutorial will give an overview of the design problems at hand : the leakage power and process variability and their implications for digital circuits and memories, and the reducing supply voltages, the design productivity and signal integrity problems for embedded analog block s. Next, a panel of experts from both industrial semiconductor houses and design companies, EDA vendors and research institutes will present and discuss with the audience their opinions on whether the design road ends at marker "65nm" or not.

Based on the pyrolysis of trichloroethene (C~HC13), also referred to as TCE, and the thermodynamic analysis of its reaction products a substitute for TCE is found. It is characterized by better physical and chemical properties and behaves as an additive during silicon oxidation identical to HC1. This chlorinated hydrocarbon, 1.1.1.-trichloroethane (referred to as C33) is used for fabrication of MOS capacitors on n-type silicon to study the properties of oxides grown with this additive. Special attention is paid to the properties influencing the performance of charge coupled devices. Storage times of 500 sec, oxide defect density of 10/cm ~, and surface-state densities lower than 5 X 109/cm 2 eV are achieved. The cleaning effect on the furnace tube yields a mobile ion density lower than 2 X 109/cm 2. The fixed oxide charge on (100) material is 5 )< 1020 cm -2. Fabrication of CCD's with this technology proves its suitability in silicon device processing.

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